HFA3128BZ

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	5 PNP
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	5.5GHz
Noise Figure (dB Typ @ f):	3.5dB @ 1GHz
Gain:	--
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 10mA, 2V
Current - Collector (Ic) (Max):	65mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	16-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	16-SOIC
Base Part Number:	HFA3128

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The application field and working principle of the HFA3128BZ is an important aspect of transistors – bipolar (BJT) – RF. This understanding of the semi-conductor technology enables the evaluation and incorporation of this transistors into electrically powered systems and technology.Before delving into the HFA3128BZ, it would be best to familiarise with the core principles of transistor technology. It refers to the use of a solid-state material, typically silicon, to control the flow of electricity in an electrical system. Electrical signals or power will be applied to a base or a gate, in the case of a BJT, which will then control the flow of electricity or current through the transistor.Bipolar transistors are two port electronic active devices; meaning they have three terminals producing an output signal that is proportional to the input signal. This type of bipolar transistor consists of two gain cells, with each of them having an emitter (the input) and a collector (the output). The base, which is the control voltage, is placed between the two gain cells, controlling the flow of electricity, based on the amount of voltage applied to it.The HFA3128BZ amplifier is a commonly used transistor in the RF field, as it has low noise figures and wideband response characteristics. It is capable of producing linear gain up to 18dB from 1 to 500MHz, with a maximum power of 500 mW, making it suitable for RF wireless systems.The device is based around the bipolar junction transistor architecture, and it is engineered to have low input bias current, low output resistance and low power gain andf high frequency stability. The device also provides a regulated, relatively stable DC bias that does not have to be adjusted for proper operations.The HFA3128BZ can operate from a single, unipolar supply voltage. Its quiescent current and bias stability of less than 0.2dB variation, makes it suitable for use in high current demanding applications. Furthermore, the HFA3128BZ also has a excellent image rejection, as it operates in a differential mode. This eliminates the need for balancing and ensures low levels of contamination in the signal path.The working principle of the HFA3128BZ is based on an open loop voltage gain stage. Its high input impedance and low output impedance guarantee that input and output signals are isolated, as current flows from the input side to the output side. The DC bias is regulated by the base control voltage, which is supplied from the same source as the input voltage.The operation of the HFA3128BZ is based on collector current mode of operation. This means that the voltage at the base of the transistor is higher than the emitter voltage. This voltage differential will cause the transistor to conduct, preventing current flow with the help of the HFA3128BZ\'s internal protection circuitry, as well as keeping distortion levels as low as possible.To summarise, the HFA3128BZ is a very powerful and efficient transistor in transistors–bipolar (BJT) – RF, with a wideband response, excellent image rejection and low noise figures. Its functionality is based on a common bipolar junction transistor architecture, operating from a single unipolar supply voltage, making it versatile and easy to use. Its collector current mode of operation ensures that all signals are correctly displaced and that high levels of distortion are kept at bay.

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