HFA3134IHZ96 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):	9V
Frequency - Transition:	8.5GHz
Noise Figure (dB Typ @ f):	2.4dB @ 1GHz
Gain:	--
Power - Max:	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	48 @ 10mA, 2V
Current - Collector (Ic) (Max):	26mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6
Supplier Device Package:	SOT-23-6
Base Part Number:	HFA3134

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Introduction

The HFA3134IHZ96 is an integrated High Frequency Amplifier Module from Avago Technologies. It is a bipolar (BJT) Radio Frequency (RF) transistor that is suitable for a range of applications, from low-power, low-noise amplifiers for the commercial and industrial 1-20MHz frequency range, to high-power, high-efficiency amplifiers capable of providing 30-35W of output power in the 900-1000MHz frequency range. This article will provide a brief overview of the HFA3134IHZ96’s application field and working principle.

Application Field

The HFA3134IHZ96 can be used in a variety of applications, but it is particularly well suited for use in RF amplifiers. It has proven itself to be highly reliable in these applications due to its high frequency, low noise, and high power capabilities. As such, it is a popular choice for use in base station transmitters, as well as for amplifying signals for satellite communications and microwave radio links. Additionally, it has been used in a variety of military applications, as well as in UHF antenna networks and low-power, low-noise user receivers.

Features and Advantages

The HFA3134IHZ96 offers a number of features and advantages that make it well suited for high-frequency applications. It has a high input impedance of 50 ohms, along with high linearity and high gain, making it capable of providing very accurate amplification over a wide range of frequencies. In addition, it has a low noise figure of only 0.9 dB, ensuring that signals remain clear and free from distortion when being amplified. Furthermore, the transistor provides high gain and high power capabilities, with a collector current of 1.5A and an output power rating of 30-35W.

Working Principle

In order to understand the working principle of the HFA3134IHZ96, it is important to be familiar with some of the basic principles of transistors. A transistor is a semiconductor device that amplifies or switches electrical signals. It is composed of two P-N junction diodes connected together, and it works by using the input current to control the amount of current flowing through the device. In the case of the HFA3134IHZ96, it operates by receiving an input signal and then amplifying it. The signal is sent to the transistor’s base, which is connected to the emitter. The collector current then passes through the collector and ultimately outputs the amplified signal. As the collector voltage increases, the current is amplified even further, allowing for high power and gain levels.

Conclusion

The HFA3134IHZ96 is an integrated High Frequency Amplifier Module from Avago Technologies. It is a bipolar (BJT) Radio Frequency (RF) transistor that is suitable for a range of applications, as outlined in this article. It is capable of high frequency, low noise, and high power capabilities, making it a popular choice for use in base station transmitters, satellite communications, and microwave radio links. In addition, it offers high input impedance, linearity, and gain, as well as a low noise figure, making it highly reliable in high-frequency applications. Finally, the HFA3134IHZ96 operates by receiving an input signal, amplifying it, and then outputting the amplified signal through the collector current and voltage.

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