Allicdata Part #: | HFA3134IH96-ND |
Manufacturer Part#: |
HFA3134IH96 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America Inc. |
Short Description: | IC TRANSISTOR UHF SOT-23-6 |
More Detail: | RF Transistor 2 NPN (Dual) 9V 26mA 8.5GHz Surface... |
DataSheet: | HFA3134IH96 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max): | 9V |
Frequency - Transition: | 8.5GHz |
Noise Figure (dB Typ @ f): | 2.4dB @ 1GHz |
Gain: | -- |
Power - Max: | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 48 @ 10mA, 2V |
Current - Collector (Ic) (Max): | 26mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-23-6 |
Base Part Number: | HFA3134 |
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The HFA3134IH96 is a high performance NPN bipolar junction transistor (BJT) commonly used in radio-frequency (RF) applications. As an RF device, it has several advantages over other types of transistors, including low noise, high power output, and high linearity. It has a low capacitance package, allowing it to be used in high-frequency applications. The HFA3134IH96 is suitable for both small signal applications and high-power amplification.
The HFA3134IH96 has three terminals: the emitter, base, and collector. The emitter terminal is where the majority of the current is injected or taken from. The collector terminal is used for current amplification. The base terminal is used to control the current flowing from the emitter to the collector. A small amount of current in the base terminal will cause a much larger current (controlled by the base-emitter voltage) to flow between the emitter and the collector. This is known as the transistor\'s gain.
The HFA3134IH96 is optimized for radio-frequency applications. It has a high frequency linearity and low noise figure, making it ideal for amplifying analog and digital signals. It has a high gain-bandwidth product, allowing it to amplify signals with low distortion up to a certain frequency. The HFA3134IH96 also has very low levels of current leakage, allowing it to be used in RF applications that require high levels of sensitivity. The low capacitance package further reduces parasitic capacitance, allowing the operation of the device up to its maximum frequency.
The HFA3134IH96 can be used in a wide variety of RF applications. It can be used for linear amplification of both analog and digital signals, as well as for frequency translation and gain control. It can also be used in telecom and wireless systems, where its high linearity and gain-bandwidth product make it suitable for linear applications. Additionally, it can be used for high-power RF amplifiers, such as for TV and radio broadcasting.
The HFA3134IH96 is a valuable component for RF applications. It has a low noise figure, high linearity, and high power output, making it ideal for amplification and frequency translation. Its low capacitance package further ensures its usage in high-frequency applications. The HFA3134IH96 is suitable for both small signal and high-power applications, making it one of the most versatile RF transistors available.
The specific data is subject to PDF, and the above content is for reference
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