HFA3127B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HFA3127B is a high-performance RF Bipolar Junction Transistor (BJT) designed for low noise, high gain, and high dynamic range applications. It is available in a 3-pin SOT-23 package and operates over a wide range of temperatures up to +100°C. The transistor has a low noise figure of 2.6 dB and a small-signal gain of 14 dB at 900 MHz, making it suitable for use in low-noise front-end applications such as receiver preamplifiers, filters, and transmitters, as well as in high dynamic range amplifiers.

The device\'s base design is based on a dielectrically-isolated, high-performance field-effect transistor (FET) process. The gate is an epitaxial layer of silicon that runs horizontally over the top of the substrate. This two-dimensional design increases both the packing density and the integration level of the transistor, allowing it to be operated at up to 200 mW of output power. The transistors also feature low and even parasitic capacitance between nodes, which improves the overall performance of the device.

The HFA3127B operates in the frequency range from 65 MHz up to 2500 MHz. The input power is up to +20 dBm and the output power is up to +9 dBm. The transistor has a low noise figure of 2.6 dB and a small-signal gain of 14 dB at 900 MHz. It is also able to switch from low band-reject to high band-reject state in ~150ns. It has an extremely low input bias current of only 0.4 pA, which improves the signal-to-noise ratio of the circuit.

In terms of working principle, the HFA3127B is a two-stage common emitter BJT routed through two externally contoured stages. Its active base is a region of heavily positively-doped silicon surrounded by a lightly doped silicon well. A control voltage is applied to the base, and current flows through the collector and emitter of the transistor, allowing it to be used as an amplifier. The output stage can also be configured as a common emitter or common base circuit, depending on the application.

The device\'s high performance is achieved by its well-controlled process parameters, efficient ESD protection circuits, and optimized layouts of the integrated circuit. It also has an electron-beam-induced out-diffusion technique, allowing the output stage\'s parameters to be tightly constrained. Additionally, its 13GHz bandwidth corresponds to a return loss of –38dB, and it can operate from a single +3V supply voltage to increase the application\'s signal integrity.

In summary, the HFA3127B is a high-performance RF Bipolar Junction Transistor (BJT) designed for low noise, high gain, and high dynamic range applications. It is based on a two-dimensional dielectrically-isolated, high-performance field-effect transistor (FET) process, and is available in a 3-pin SOT-23 package. It has a low noise figure of 2.6 dB, small-signal gain of 14 dB at 900 MHz, and operates in the frequency range from 65 MHz up to 2500 MHz. It also has an extremely low input bias current of only 0.4 pA, making it suitable for use in low-noise front-end applications such as receiver preamplifiers, filters, and transmitters, as well as in high dynamic range amplifiers.

The specific data is subject to PDF, and the above content is for reference