Allicdata Part #: | HFA3127RZ-ND |
Manufacturer Part#: |
HFA3127RZ |
Price: | $ 5.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America Inc. |
Short Description: | IC TRANS ARRAY 5X NPN 16-QFN |
More Detail: | RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mo... |
DataSheet: | HFA3127RZ Datasheet/PDF |
Quantity: | 314 |
1 +: | $ 5.06520 |
10 +: | $ 4.57821 |
100 +: | $ 3.79033 |
500 +: | $ 3.30057 |
1000 +: | $ 2.87469 |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 10mA, 2V |
Current - Collector (Ic) (Max): | 65mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-VFQFN Exposed Pad |
Supplier Device Package: | 16-QFN (3x3) |
Base Part Number: | HFA3127 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | 5 NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 3.5dB @ 1GHz |
Gain: | -- |
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The HFA3127RZ is a type of bipolar junction transistor (BJT) designed for radio frequency (RF) applications. It is widely used in a variety of consumer electronics and other applications such as wireless communications and satellite radio. The HFA3127RZ has some unique features that make it an ideal device for RF applications, such as low noise, high gain, and good linearity.
A bipolar transistor is a type of semiconductor device that is used to amplify or switch electrical signals. Bipolar transistors are made up of three components: the base, the emitter, and the collector. The emitter and collector are connected to the base via a PN junction. When current is applied to the base terminal, this induces a voltage across the collector-emitter junction which results in a current flowing through the collector. The amount of current that flows through the transistor is determined by the amount of base current.
The HFA3127RZ features a low noise voltage of 1.2V and a high current gain of 80. This device also features excellent linearity at high frequencies up to 1GHz. As a result, it is capable of delivering low distortion signals at higher frequencies. The HFA3127RZ also features lower power consumption compared to similar transistors and is rated for operation from -40°C to +125°C.
The HFA3127RZ is used in a number of applications such as satellite radio, cordless telephones, and wireless communication systems. It is well-suited for applications where low noise and high gain are important. The device is also suitable for use in broadband amplifiers and receivers. In addition, the HFA3127RZ is suitable for use in oscillators, filters, and other circuits that require linearity at high frequencies.
The HFA3127RZ bipolar transistor has a number of advantages that make it an ideal choice for RF applications. It is capable of delivering low distortion signals at higher frequencies and features low noise and high gain. In addition, the device is rated for operation at temperatures up to 125°C, giving it a long operating life. Finally, it is relatively inexpensive and easily available, making it an attractive choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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