Allicdata Part #: | HFA3128R-ND |
Manufacturer Part#: |
HFA3128R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America Inc. |
Short Description: | IC TRANS ARRAY 5X PND 16QFN |
More Detail: | RF Transistor 5 PNP 15V 65mA 5.5GHz 150mW Surface ... |
DataSheet: | HFA3128R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | 5 PNP |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 5.5GHz |
Noise Figure (dB Typ @ f): | 3.5dB @ 1GHz |
Gain: | -- |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 10mA, 2V |
Current - Collector (Ic) (Max): | 65mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-VFQFN Exposed Pad |
Supplier Device Package: | 16-QFN (3x3) |
Base Part Number: | HFA3128 |
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HFA3128R is a high-performance bipolar NPN transistor that is widely used in Radio Frequency (RF) applications. This transistor is made using advanced technology and provides a good balance between performance, size and cost. HFA3128R is particularly suitable for applications that require high output power, good linearity and low-noise.
The HFA3128R belongs to a sub-category of bipolar junction transistors (BJTs) referred to as RF, or radio frequency BJTs. These transistors are specifically designed to operate in the RF range, typically from 1 MHz to 1 GHz. While traditional BJTs are rather slow in comparison, RF BJTs exemplify quick response times, making them ideal for these applications.
HFA3128R transistors possess a variety of features that make them particularly attractive for use in radio frequency applications. The transistor is good at handling high-power levels and has excellent linearity performance. It also offers low-noise levels, which are important for many RF applications. The device also provides very low levels of distortion or thermal noise, reducing the need for complex signal processing. In addition, the device is rated for operation at higher temperatures than traditional transistors and is more resilient to changes in environment.
The HFA3128R\'s working principle is based on the same principles of operation as that of any other BJT. It consists of three terminals, the base, collector and emitter. When a small signal is applied to the base, it controls the current flow from collector to emitter by altering the resistance across the device. This action is used to control the signal power of the device. By controlling the current flow between the two terminals, the transistor can amplify or reduce the signal at the output.
HFA3128R is used in a variety of applications that require accurate signal amplifying and distinguishing, such as radio communications, wireless telecommunications, radar systems and navigation systems. It is also used in amplifiers, oscillators, active filters, mixers and voltage-controlled oscillators (VCOs). In addition, the device can be used in modulators, frequency multipliers, detectors and repeaters.
The HFA3128R is a very capable transistor and is well-suited to a variety of radio frequency applications. Its combination of features makes it an excellent choice for a wide range of applications that demand good performance, cost-effectiveness and size. It offers great performance, reliability and low-noise levels, making it an ideal choice for wireless telecommunications and other RF applications.
The specific data is subject to PDF, and the above content is for reference
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