HFA3127RZ96

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

HFA3127RZ96 transistors, classified as RF bipolar junction transistors (BJT), are designed to operate in radio frequency (RF) applications with a range of outputs from 0.3−1500MHz. This high-speed, low-power transistor is excellent for intermediate and final-stage amplification in radio equipment, cellular phones, satellite transmissions, and other RF communications.

The basic working principle of HFA3127RZ96 transistors is the same as any other bipolar junction transistor. BJTs are composed of three layers of semiconductor materials, usually 2 P-type doped semiconductor regions (the emitter and the base) with a single N-type doped semiconductor region (the collector). A typical NPN transistor has two PN junctions, an emitter and an internal collector-base junction. When a signal is applied to the base, this will cause a difference in potential between the emitter and the collector. The current flow in the emitter-collector path is known as collector current, or Ic.

As current passes between the emitter and collector, it will create a voltage between the base and collector (known as the beta voltage). This voltage is used to regulate the switching between the two terminals. If the voltage is increased at the base, the current will increase in the collector. This is known as that saturation current. When the voltage decreases, the current will decrease. This is known as the cutoff current.

HFA3127RZ96 transistors feature a wide range of performances, from low noise to high efficiency and high linearity. The NPN type transistor has a maximum power dissipation of 0.25 W. This transistor also features a collector-emitter voltage of 12 V and a collector-base voltage of 25 V. The maximum DC collector current is 30 mA, with a maximum surge collector current of 800 mA. These features make this transistor suitable for many RF applications.

HFA3127RZ96 transistors are suitable for use in RF applications like amplifiers, switches, mixers, receivers, and RF oscillators. The main benefit of using this transistor is that it can provide significant bandwidth without the need for large amounts of power. This makes it a great solution for RF applications that require a wide variety of frequencies.

The HFA3127RZ96 transistors are an excellent choice for the many RF applications requiring a high-speed, low-power solution. This transistor has the ability to provide significant bandwidth with low DC current and will provide superior performance for all types of RF applications. The transistor is also more stable and reliable than many other types of transistors, which makes it an ideal choice for many RF amplifier and other radio frequency applications.

The specific data is subject to PDF, and the above content is for reference