Allicdata Part #: | HFA3127BZ-ND |
Manufacturer Part#: |
HFA3127BZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America Inc. |
Short Description: | IC TRANSISTOR ARRAY UHF 16-SOIC |
More Detail: | RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mo... |
DataSheet: | HFA3127BZ Datasheet/PDF |
Quantity: | 875 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 5 NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 3.5dB @ 1GHz |
Gain: | -- |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 10mA, 2V |
Current - Collector (Ic) (Max): | 65mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 16-SOIC |
Base Part Number: | HFA3127 |
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The HFA3127BZ is a type of bipolar junction transistor (BJT) designed specifically for use in radio frequency (RF) applications. This transistor has been designed to have very high gain characteristics, which makes it ideal for use in amplifying and transmitting signals.
The HFA3127BZ is a PNP type BJT, which means that the emitter is positive compared to the base and the collector is negative. This type of BJT is typically used in amplifier circuits and is capable of providing high frequencies with very low distortion. It also has low input impedance and can be used in applications where input resistance is important.
The HFA3127BZ transistor is used mainly in linear and switching applications. In linear applications, the transistor is used to amplify radio frequency signals. It is also used in switching applications as a switch between a low impedance and a high impedance. It can be used for both analog and digital applications, and it is also suitable for applications that require high gain and low impedance.
The HFA3127BZ uses a simple principle to operate. It is an NPN (negative-positive-negative) type BJT. This means that when an electric current flows through the base of the transistor, it causes the collector-base junction to become forward biased, allowing current to flow through the collector. This current flow amplifies the voltage on the collector, resulting in an amplified signal. The current is then extracted from the emitter and routed to the load.
The HFA3127BZ provides a wide range of features including high voltage capabilities, low on-resistance, high gain, and a high power dissipation. It also has a low noise figure and its wide frequency response range makes it ideal for use in RF applications. The device is also very durable and can be used in a variety of environments.
The HFA3127BZ is an ideal choice for designers looking for a cost-effective solution for their RF needs. It offers high performance and reliability, making it a great choice for a wide range of applications. With its low power dissipation and high frequency response, it is perfect for applications where efficiency and reliability are important. The HFA3127BZ is a reliable and cost-effective solution for any RF application.
The specific data is subject to PDF, and the above content is for reference
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