HFA3102B96

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HFA3102B96 is a complementary N-channel/P-channel, silicone-based, RF Transistor that is specifically designed for use in commercial cellular telephone systems. It features low noise and high gain, with an optimised input impedance and an enhanced RF stability.

This versatile device is suitable for use in a variety of applications, including power amplifier, low-noise amplifier, IF amplifier, mixers and oscillators. It is also suitable for use in medium and high power applications, such as power amplifiers for GSM, CDMA and LTE smartphones.

The HFA3102B96 provides excellent performance from 0.1 to 2000 MHz, with peak gain at both 0.5 and 1.5 GHz. It can handle peak output power levels up to 16 dBm without suffering from thermal runaway, and the gain flatness is maintained even at high output powers. It also has a very low noise figure of 0.9 dB and a very low phase noise of -80 dBc/Hz.

The HFA3102B96 features a wide range of voltage and current control capabilities, with overdrive capability up to 20 times the nominal current, as well as a wide range of bias adjustment levels. This allows for precise control of the gain and compression characteristics of the device.

The HFA3102B96 has an input-to-output ratio of 20 dB when driven at 1.5 GHz, and it has a wide frequency operating range, up to 4 GHz with a gain of 10 dB. The device operates with a supply voltage of 4.5 V and a supply current of 45 mA.

The HFA3102B96 works on the principle of Radio Frequency (RF) switching transistors, where the current flowing through the N-channel and P-channel devices are amplified and then routed to the output. The output signal is then converted to an amplified version of the input signal, as the input signal is routed through the devices and amplified.

The overall efficiency of the transistor is maximised by exploiting the inherent internal capacitance of the transistors, which enhances the amount of current that can be amplified, resulting in higher gain for the device. The N-channel and P-channel are also optimised to increase the gain of the device, resulting in higher output levels.

The HFA3102B96 is a very reliable RF switching transistor that offers excellent performance in a wide range of applications, from low to high power. With its low noise figure, high gain, and wide frequency range, it is ideal for use in commercial cellular telephone systems. Its highly optimised design makes it an ideal choice for high-performance power amplifier, low-noise amplifier, IF amplifier, mixer, and oscillator applications.

The specific data is subject to PDF, and the above content is for reference