HFA3128R96

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Bipolar junction transistors (BJTs) are commonly used in radio-frequency (RF) circuits and is the type of transistor used in the HFA3128R96. This device is a PNP high-frequency bipolar transistor manufactured by Harris Semiconductor, and is suitable for a range of uses in high frequency applications. This article will provide an overview of the device\'s application field, its operating principle and some of its main characteristics.

Application Field

As a high frequency bipolar transistor, the HFA3128R96 is suitable for a range of uses in radio frequency (RF) circuits. It can be used in oscillator and amplifier circuits, as well as other circuit applications that need to operate at higher frequencies with relatively low current and low power consumption. Examples of applications using the HFA3128R96 include transmitter and receiver amplifiers for cellular, cordless and paging systems, as well as various other high-frequency amplifier and oscillator applications.

Working Principle

The HFA3128R96 is a PNP type of high-frequency bipolar transistor. Its main purpose is to amplify current and voltage in electronic circuits. It works on the principle of charge carriers, where electrons and holes flow through the different parts of the transistor, depending on the state of the base current. When the base current is off, the collector-emitter current will be off too. When the base current is switched on, electrons will flow from the emitter to the collector, thus generating a collector-emitter current.

The operation principle of the device is also dependent on its topology, which determines the configuration of the transistor’s various electrodes. In the HFA3128R96, the topology used is common base topology, where the emitter is grounded and the base and collector are connected in series. This configuration is ideal for high-frequency applications, since the collector-emitter voltage is very high and the impedance is low. As a result, the transistor can switch relatively quickly and with minimal power loss.

Characteristics

The HFA3128R96 is an NPN type of transistor, with a maximum collector-emitter voltage of 40V and a maximum collector current of 1.2A. It has a good power gain characteristics, with a maximum gain at 1MHz of almost 30dB, and at 4GHz it can reach gains of up to 20dB. The device also has a fT (transition frequency) of 3GHz and a maximum operating temperature of 150°C. These characteristics make it suitable for applications requiring high-frequency amplification.

Conclusion

The HFA3128R96 is a high-frequency PNP bipolar transistor manufactured by Harris Semiconductor. It is suitable for a range of applications in high-frequency circuits, such as amplifiers and oscillators in transmitter and receiver designs. The device has a maximum collector-emitter voltage of 40V and a maximum collector current of 1.2A, with a power gain of up to 30dB at 1MHz. The device also has a fT of 3GHz and a maximum operating temperature of 150°C, making it suitable for use in high-frequency applications requiring fast switching and low power loss.

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