HIP2100IBZT Allicdata Electronics
Allicdata Part #:

HIP2100IBZTTR-ND

Manufacturer Part#:

HIP2100IBZT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC DRIVER HALF BRDG 100V 8-SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
DataSheet: HIP2100IBZT datasheetHIP2100IBZT Datasheet/PDF
Quantity: 5000
Stock 5000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 9 V ~ 14 V
Logic Voltage - VIL, VIH: 4V, 7V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 114V
Rise / Fall Time (Typ): 10ns, 10ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: HIP2100
Description

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HIP2100IBZT is an integrated gate driver which is widely used in PMIC (power management IC) applications. It is designed to provide multiple outputs, high voltage capacity and low on-resistance. The integrated gate driver also offers a wide range of protection features such as reverse polarity and current limiting, as well as excellent thermal performance.

The HIP2100IBZT is a single channel device that can be used to drive a variety of power control devices, including MOSFETs, IGBTs, Triacs and more. It can be used in a wide range of applications, such as motor drives, lighting control, renewable energy and more.

The HIP2100IBZT is capable of delivering currents up to 10A, making it suitable for applications that require high power and voltage. It can also support fast switching times with its low propagation delay, ensuring high efficiency and effective control of power devices.

The integrated gate driver also features extensive protection features. It has internal short circuit protection, current limiting, and reverse polarity protection, making it suitable for use in extreme environments. It also has adjustable under-voltage lockout, ensuring that the device does not start in an unsafe state.

The HIP2100IBZT is designed to deliver an accurate and fast response. The device uses a high-speed level shifted pulse width modulation (PWM) technique to enhance the control of the switching element. The PWM technique also ensures low power loss and low noise.

The HIP2100IBZT integrates a variety of protection features which make it suitable for a wide range of applications. It has a wide range of over-temperature protection and under-voltage protection which are designed to ensure reliable operation even in extreme environments.

In addition, the HIP2100IBZT has multiple output drivers which can be used to drive different types of power devices such as MOSFETs, IGBTs, Triacs and more. The device also comes with a wide operating temperature range of –40°C to +150°C, making it suitable for use in both commercial and industrial applications.

The HIP2100IBZT is a highly integrated and flexible product which is suitable for a wide range of applications. It features an integrated protection and supply module, multiple output drivers, a wide operating temperature range and fast switching times, making it ideal for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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