HIP2101IR4ZT

Current - Peak Output (Source, Sink):	2A, 2A
Base Part Number:	HIP2101
Supplier Device Package:	12-DFN (4x4)
Package / Case:	12-VFDFN Exposed Pad
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	10ns, 10ns
High Side Voltage - Max (Bootstrap):	114V
Input Type:	Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	0.8V, 2.2V
Voltage - Supply:	9 V ~ 14 V
Gate Type:	N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Independent
Driven Configuration:	Half-Bridge
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

HIP2101IR4ZT is a monolithic dual-channel MOSFET driver IC. It is a PMIC - Gate Drivers device which is incorporated in system designs that require a high performance and reliable gate drive solution. In this article, we will discuss its application field and working principle.

Application Field

The HIP2101IR4ZT is versatile, high performance and reliable MOSFET driver integrated circuit. This device is suitable for driving high voltage MOSFETs with high current loads at high frequency. It can be used in a wide variety of applications, including, but not limited to, power supplies, motor control, power controllers, motor mount controllers and motor interface modules. In switched-mode power supplies, for instance, this device can be used to provide high speed, high current gate drive signals to fast switching MOSFETs. This allows for increased power conversion efficiency. Additionally, the device can be used in motor control applications by providing gate drive signals for motor current sensing, digitizing of current sense waveforms, and for efficiently controlling motor speed. In summary, the HIP2101IR4ZT is suitable for a wide range of application fields, from power supplies and motor control to power controllers and motor interface modules.

Working Principle

The HIP2101IR4ZT device works by providing high current gate drive signals to fast switching MOSFETs. This device includes a charge pump circuit and a voltage regulator which controls the gate drive voltage of the MOSFET. The device also includes built-in protection circuitry which protects the MOSFETs from over-drain, over-source and turn-on/off transients. The device integrates two independent channels which can be used to drive the gates of two MOSFETs. Each channel features an adjustable dead time generator and an adjustable peak current limit which can be used to prevent shoot-through and limit the MOSFET power dissipation in the event of an overdrive signal. The driver IC also features an integrated fault latch and signal flagging circuit which will ensure the integrity and reliability of the system when there is an over-current or over-voltage event. Additionally, the device includes a power-good feedback pin which will indicate the status of the internal circuit. In summary, the working principle of the HIP2101IR4ZT is based on providing high current gate drive signals to fast switching MOSFETs using an adjustable peak current limit and an adjustable dead time generator. The device also integrates various protection and feedback control signals which ensure a stable and secure operation of the system.

Conclusion

The HIP2101IR4ZT is a versatile, high performance and reliable MOSFET driver integrated circuit which can be used in a wide range of applications. This PMIC - Gate Drivers device is designed to provide high current gate drive signals to fast switching MOSFETs, and also includes various protection and feedback control signals to ensure a stable and secure operation of the system.

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