HIP2123FRTAZ

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Power Management Integrated Circuit (PMIC) devices are used to raise or lower the voltage and current needs of power integrated circuits. Gate drivers are a subset of PMICs and are used as a driving stage between the input signal source and the power brick MOSFETs. The HIP2123FRTAZ is a high-current, dual-channel, low-side gate driver, designed to drive N-Channel MOSFETs. It supports a wide input voltage range, offering both high-side and low-side output current range, enabling it to be used in a variety of applications.

What is HIP2123FRTAZ?

The HIP2123FRTAZ is a high-performance, dual-channel, low-side gate driver, which provides a continuous output current of up to 8 A. It is designed to drive loads with switching times as fast as 500 ns, and has excellent thermal performance, making it ideal for controlling inductive and capacitive loads. The device integrates the input and the output stages so that the voltage at the gate of the MOSFET is reduced to approximately 0.8V for a guaranteed turn-on or turn-off when the device is used as a low-side switch. The device also features a low jitter PWM input for variable speed applications.

HIP2123FRTAZ Application Fields

The HIP2123FRTAZ device has a wide range of applications. It can be used in automotive, industrial, consumer and information technology (IT) systems. It is suitable for controlling solenoid valves, motors, fans and other high-current loads. It is also suitable for controlling power electronics in portable and sensitive applications. In terms of applications, it can be used for boosting and bucking of DC-DC converters, voltage isolation for AC-DC power supplies, and gate driving of H-bridges.

HIP2123FRTAZ Working Principle

The HIP2123FRTAZ device is based on a high-performance, low-side gate driver array. It consists of two low-side gates providing 8A of continuous output current, each with a built-in driver circuit. The input stage is composed of an input buffer, a decoder and a comparator, while the output stage is composed of N-channel MOSFETs. The device has the ability to drive both low-side and high-side MOSFETs, using the built-in PWM (pulse width modulation) signals. The PWM signals are generated by the input buffer and decoder, which receive the input signals from the external sources. When voltage is applied to the gate of the MOSFETs, the output current of the HIP2123FRTAZ is passed through the MOSFETs, thereby controlling the power supplied to the load.

Conclusion

The HIP2123FRTAZ is a high-performance, dual-channel, low-side gate driver, designed specifically for controlling N-Channel MOSFETs. It has a wide application field, including automotive, industrial and information technology (IT) applications. It also has a wide input voltage range and high output current range, making it ideal for controlling high power devices. The device features a low jitter PWM input and includes a built-in driver circuit, enabling accurate control of the output current.

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