IDT71256L35Y Allicdata Electronics
Allicdata Part #:

IDT71256L35Y-ND

Manufacturer Part#:

IDT71256L35Y

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 256K PARALLEL 28SOJ
More Detail: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para...
DataSheet: IDT71256L35Y datasheetIDT71256L35Y Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ
Base Part Number: IDT71256
Description

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Memory is a key element in any electronic device. Without it, devices would have very limited capability and performance. One tool used in memory designs and systems is the IDT71256L35Y. This reliable device has numerous features that make it a valuable asset in the memory industry. In this article, we will discuss the application field and working principle of the IDT71256L35Y.

Application Field of the IDT71256L35Y

The IDT71256L35Y is typically used in memory designs for embedded systems, such as microcontrollers, DSPs, FPGAs, as well as computer systems. This device operates at low voltage from 2.3V to 3.6V and can be used in applications requiring low-power memory integrated circuits. It consists of 2, 4, and 8 Mb synchronous Static Random Access Memory (SRAM) components. Its internal architecture allows for fast access times, competitive densities, and maximum integration. There are three IDT71256L35Y versions available containing 2 Mb, 4 Mb and 8 Mb memory components.

Working Principle of the IDT71256L35Y

The IDT71256L35Y is a Multi-Port Static Random Access Memory (SRAM) designed to provide a versatile memory interface for embedded systems. Its internal architecture consists of an array of memory cells organized into rows and columns. Data can be stored in the cells, and can be read and written by using addressing information. The device has an access time of 10 ns, a maximum clock speed of 75 MHz, and a read/write cycle time of 50 ns. The IDT71256L35Y provides a simultaneous read/write capability, allowing read or write operations to occur on multiple addresses and data pins. This feature makes the device suitable for multi-tasking systems.

Conclusion

The IDT71256L35Y is a versatile memory device that is ideal for embedded systems requiring low-power memory integrated circuits. This device is capable of providing a fast access time and competitive densities. Its Multi-Port SRAM architecture allows for simultaneous read/write operations, making it suitable for multi-tasking systems. In this article, we discussed the application field and working principle of the IDT71256L35Y.

The specific data is subject to PDF, and the above content is for reference

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