
Allicdata Part #: | IDT71V3559SA75BG-ND |
Manufacturer Part#: |
IDT71V3559SA75BG |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 4.5M PARALLEL 119PBGA |
More Detail: | SRAM - Synchronous ZBT Memory IC 4.5Mb (256K x 18)... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous ZBT |
Memory Size: | 4.5Mb (256K x 18) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 7.5ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3.135 V ~ 3.465 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 119-BGA |
Supplier Device Package: | 119-PBGA (14x22) |
Base Part Number: | IDT71V3559 |
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The IDT71V3559SA75BG is a memory and semiconductor memory device that is widely used in the embedded industry. It is an integrated circuit with a wide variety of applications and working principles.
This device is based on DRAM memory which stands for Dynamic Random Access Memory. It uses a variety of technologies including dynamic access memory and static access memory. The memory is capable of storing data and instructions automatically in the form of electrical signals. This makes the system more efficient and faster. It also helps reduce the size of the data and instructions that need to be stored.
The IDT71V3559SA75BG is an FPGA (Field Programmable Gate Array) device. It consists of a metal-oxide-semiconductor field effect transistor (MOSFET) along with conventional circuit elements such as capacitors, resistors, gates and logic circuits. This makes it suitable for complex applications where logic has to be implemented.
The most important application of the IDT71V3559SA75BG is its usage in embedded systems. It can be used to build custom integrated circuits and processors. It is also used in the design of LCD controllers. IDT71V3559SA75BG can also be used to store data and application specific instructions for embedded systems.
The working principle of the IDT71V3559SA75BG is based on the concept of SRAM. SRAM (Static Random Access Memory) is a type of semiconductor memory that uses complementary metal-oxide-semiconductor (CMOS) technology. It consists of memory cells that contain two transistors, one capacitor, and an addressable address. Traditional SRAM memories can be divided into three types: Cache SRAM, Static RAM and Pseudo SRAM.
The IDT71V3559SA75BG uses a system of fast write and read cycles using SRAM technology. The device utilizes the fast write-and-read cycle of single-port RAM to access the data without increasing the latency. The data can be written and read in two cycles instead of the traditional three cycles used by conventional SRAM devices. This makes the device faster and more reliable.
The IDT71V3559SA75BG is a fast and reliable memory device that is widely used in embedded systems. It uses DRAM and SRAM memory to provide a reliable storage system and fast speeds. It is also used in LCD controllers and custom integrated circuits. The device works by making use of fast write-and-read cycles that enable it to access data quickly and reliably.
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