IDT71V3558S200BQI8 Allicdata Electronics
Allicdata Part #:

IDT71V3558S200BQI8-ND

Manufacturer Part#:

IDT71V3558S200BQI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 165CABGA
More Detail: SRAM - Synchronous ZBT Memory IC 4.5Mb (256K x 18)...
DataSheet: IDT71V3558S200BQI8 datasheetIDT71V3558S200BQI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V3558
Supplier Device Package: 165-CABGA (13x15)
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 3.2ns
Series: --
Clock Frequency: 200MHz
Memory Size: 4.5Mb (256K x 18)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Memory

The IDT71V3558S200BQI8 is a high-performance 12-Mbit, dual-port synchronous SRAM optimized for ultra-low-power performance and high-bandwidth. It is incredibly versatile, with 512 words of 1,024 bits each, operating at a maximum frequency of 133MHz and with access times of 8ns. It is packaged in a 96-pin FBGA package and is ideal for applications with space and power constraints such as remote sensors, cellular base stations, and other portable devices.

The IDT71V3558S200BQI8 uses an advanced dual-port SRAM that enables simultaneous, high-speed access of data from two independent ports – without any conflict. This makes it ideal for performing intensive, real-time data processing for applications such as data transfers between different devices, simultaneous operations, and the flow of data between multiple users.

The IDT71V3558S200BQI8 has two independent write and read clocks, as well as independent control signals, to ensure that write and read operations are performed synchronized. The clock synchronization ensures that data paths remain stable and offer consistent data rates, enabling reliable communication of data over the data ports.

The IDT71V3558S200BQI8 is designed with asynchronous write operations: write data arrives on the write port and is stored into an internal Write FIFO until it is written to the SRAM. It is also designed with fully synchronous read operations, which read data out of the SRAM and place it in an internal Read FIFO until it is eventually outputted from the read port. The read and write FIFOs have unlimited depths and can store up to 2,048 bits.

The IDT71V3558S200BQI8 has extensive features that increase its usability such as programmable FIFO full/empty flags, byte operations, simple address plus 8-bit data write, and fault-tolerant operation during reads in case of back-power. These features combine to make the IDT71V3558S200BQI8 suitable for applications requiring high throughput and reliability.

The IDT71V3558S200BQI8 is widely used in applications such as industrial control systems, medical equipment, communication systems, embedded computing and portable devices. It is also used in applications needing high bandwidth, low power requirements and fast access times such as motion control, streaming media, and signal processing.

In conclusion, the IDT71V3558S200BQI8 is a versatile, high-performance dual-port synchronous SRAM suitable for a range of applications where space and power conservation are important. With its advanced dual-port SRAM design, programmable FIFOs, and fault-tolerant operation, the IDT71V3558S200BQI8 ensures fast, reliable data transfers in even the most challenging environments.

The specific data is subject to PDF, and the above content is for reference

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