IDT71V2559S85BG Datasheet/PDFThe IDT71V2559S85BG is a memory device used in a variety of applications. The device is a 1.8 V 64Kx18 SRAM organized as eight banks of 1 Mbit each. It features basic features of market needs in the 64Kx18 SRAM market, with fast cycle access time. It also incorporates a chip select (CS), write enable (WE) and output enable (OE) signals for greater flexibility and convenience.
The device is typically used for code and data storage applications, such as in peripherals, microprocessor systems, cryptographic engines, and general purpose logic. It can also be used in communications circuits and embedded systems that require low-power memory chips.
The IDT71V2559S85BG is built on a process technology called Planar Cell Array (PCA), which enables the device to perform faster cycle access time and also supports low power consumption. The device has a high-speed clock rate of 66 MHz, and supports asynchronous read and write. It also features five other clock rates ranging from 33 MHz to 2 MHz, allowing users to tailor their performance needs.
The device\'s design is tailored to match market requirements and supports a wide-range of features, including low-voltage operation, low standby current, low maximum operating current, asynchronous read and write configuration and a programmable output. It is packaged in a 100-pin Pb-Free TQFP/TSSOP package, and operates from a single 1.8 V power supply. The device also has guards for in-circuit programming and debugging purposes.
The device is also equipped with several voltage regulators, including a clock drive regulator, a logic supply regulator and an IO regulator, that ensure that the device runs at a stable voltage and performs efficiently despite varying power conditions. Lastly, the IDT71V2559S85BG incorporates built-in ECC correction, bi-directional lanes and secure programming protection (SPP) to provide the system with added protection from possible reliability and security risks.
The IDT71V2559S85BG memory device is an ideal choice for applications requiring an efficient, low-power, low-cost memory solution. It offers users the flexibility and convenience that comes with an SRAM, as well as the performance and reliability necessary for embedded and communications applications.