IDT71V016SA15YI8 Allicdata Electronics
Allicdata Part #:

IDT71V016SA15YI8-ND

Manufacturer Part#:

IDT71V016SA15YI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: IDT71V016SA15YI8 datasheetIDT71V016SA15YI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Base Part Number: IDT71V016
Description

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Memory devices play an essential role in today’s computers and other modern digital devices. From computers to phones to tablets, memories are used to store and process vast amounts of data. As such, they need to be reliable, reliable and fast, and this is where the IDT71V016SA15YI8 memory device comes in. This memory device is widely used and is reliable and fast enough to meet the needs of most digital applications. In this article, we will discuss the application field and working principle of the IDT71V016SA15YI8 memory device.

The IDT71V016SA15YI8 memory device is a 16Mbits asynchronous CMOS static random access memory (SRAM). The device is organized as 2,097,152 words of 8 bits each, compatible with the industry standard 100-pin SDRAM-24 package. The device contains a column address space and a row address space, organized into 512 banks of 512 words each. This configuration allows for a maximum of 64 address spaces. The IDT71V016SA15YI8 can operate from a single 5.0V supply and features a fast write cycle with a maximum data transfer rate of 10Mbits/s.

The IDT71V016SA15YI8 is primarily used in memory-intensive applications such as embedded system controllers, digital signal processors, and baseband devices. It is also often used in industrial control applications, gaming consoles, and other devices that require fast and reliable random access memory. The primary application field for the IDT71V016SA15YI8 is in industrial and embedded applications.

The working principle of the IDT71V016SA15YI8 memory device is based on the concept of synchronous random access memory (SRAM). It is an electronic circuit that can store and access data without waiting for clock cycles as required for dynamic RAM. SRAM circuits are formed from small arrays of transistors functioning as memory cells. In SRAM, data is stored in latch circuits that are formed from four transistors for each bit of data. Each latch allows one bit of data to be written and read, and the internal structure of each cell ensures that the data is written correctly. The IDT71V016SA15YI8 is a static RAM that consists of thousands of cells arranged in 512 banks of 512 words each. It features fast access times with a maximum data transfer rate of 10Mbits/s.

The IDT71V016SA15YI8 is an excellent choice for industrial and embedded applications requiring fast and reliable random access memory. It provides reliable performance with fast access times and is capable of supporting a maximum data transfer rate of 10Mbits/s. Its 512 banks of 512 words each allows up to 64 address spaces, enough for most applications. It is a reliable and fast memory device with a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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