IDT71V25761S200PF

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Memory products have been around for centuries, however today’s memory devices have seen incredible advances in their design and function. One of the most common forms of modern memory is a static random-access memory (SRAM) device such as the IDT71V25761S200PF. This device is used for all types of applications including memory storage, control functions, and data communication, among others.

The IDT71V25761S200PF is a 256K-bit SRAM, organized as 1 Meg x 18 bits with an associated byte wide write enable, output enable and burst control. It features built-in parity protection, enhanced thermal and ESD protection, burst mode support and programmable operands. This SRAM device also supports page mode operation and high-speed register (or synchronous) operations.

The main application of the IDT71V25761S200PF is memory storage. It can be used to provide non-volatile memory storage solutions for both embedded and application processor systems. It can be used for both random and linear access of data and provides a low footprint due to its high density. The IDT71V25761S200PF is also used as an intermediate storage for DSP’s, MCU’s and other data processing applications.

The IDT71V25761S200PF is a synchronous device, meaning that it requires an external clock signal to synchronize the input and output signals. The device can operate at speeds of up to 200 MHz with a burst mode length of either one or two words. The SRAM utilizes two separate input/output (I/O) lanes and two separate buses (data and control) to enable high speed operations and flexibility. The device supports page mode, low power page mode, and high speed register (HSR) mode of operation.

The working principle of the IDT71V25761S200PF is based on the need for a high-speed synchronous system. The device stores data in an array of cells, where each cell can store one bit of data. When the clock signal is received, the device reads each cell in the array. If a certain cell contains a "1" bit, the device reads it and stores it in the output byte. If the cell contains a “0” bit, the device skips it and moves on to the next cell in the array.

Once the output byte is assembled by the device it is stored in the output register, which is then ready to be outputted. Thus, the device is able to quickly read and output the data stored inside the memory array. This allows the device to achieve high speeds while using minimal power.

In conclusion, the IDT71V25761S200PF is a static random-access memory device which is used primarily for memory storage applications. The device is capable of operating at speeds of up to 200 MHz with a burst mode length of either one or two words. The device works by reading each cell in an array, assembling it into an output byte, and storing it in the output register.

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