IDT71V2559S75BG Allicdata Electronics
Allicdata Part #:

IDT71V2559S75BG-ND

Manufacturer Part#:

IDT71V2559S75BG

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 119PBGA
More Detail: SRAM - Synchronous ZBT Memory IC 4.5Mb (256K x 18)...
DataSheet: IDT71V2559S75BG datasheetIDT71V2559S75BG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (256K x 18)
Write Cycle Time - Word, Page: --
Access Time: 7.5ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)
Base Part Number: IDT71V2559
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Nuclear memory, otherwise known as IDT71V2559S75BG, is a type of non-volatile electronic memory that stores data even when power is no longer present. It is based on a MOS (Metal Oxide Semiconductor) static flip-flop design, which makes it an efficient and reliable form of both long-term and short-term memory storage. This type of memory is used in many modern computing applications, from desktop computers, to aerospace equipment and even medical devices.

The IDT71V2559S75BG works by using a two-terminal inverter as well as a read-write device consisting of two field-effect transistors (FETs). A power line supplies power to the read and write circuits. When the write circuit is activated, data from the memory bus is transferred to the FETs, which cause the voltage on the inverter to be either high or low. This voltage is retained until it is written over by new data.

This operation ensures that the data is stored even when power is removed. Additionally, the FETs ensure that the information stored in the memory is secure, since they are not affected by electromagnetic interference. This makes them ideal for applications such as aeronautics and medical equipment, where reliability and data security are of utmost importance.

Moreover, IDT71V2559S75BG is a cost-effective solution compared with other non-volatile memory technologies, such as EEPROM and MRAM. Additionally, its low power consumption makes it an attractive choice for applications that require long battery life, such as portable devices. Finally, its fast write and read times make it a great choice for applications that require fast access to large amounts of data, such as database management systems.

In summary, IDT71V2559S75BG is a reliable and secure form of non-volatile memory, which is suitable for a wide range of applications. Its fast write and read times, low power consumption, and cost-effectiveness make it an attractive choice for a variety of tasks. Its accuracy and durability make it the perfect solution for applications that require long-term, reliable data storage.

The specific data is subject to PDF, and the above content is for reference

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