IDT71V256SA12YI Allicdata Electronics
Allicdata Part #:

IDT71V256SA12YI-ND

Manufacturer Part#:

IDT71V256SA12YI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 256K PARALLEL 28SOJ
More Detail: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para...
DataSheet: IDT71V256SA12YI datasheetIDT71V256SA12YI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ
Base Part Number: IDT71V256
Description

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MemoryThe IDT71V256SA12YI is an industrial product used in memory applications. It is manufactured by Integrated Device Technology (IDT), a company specializing in the production of semiconductor components. This product is a dynamic random-access memory (DRAM) device and is capable of storing 64 KB of data. It has a Memory Speed of 30ns, which is approximately three times faster than the traditional asynchronous DRAM. It also uses Static Column Address Strobe (SCAS) technology, allowing it to use the fastest access times for memory accesses at the cost of a small added memory latency.The IDT71V256SA12YI is a dual in-line memory module (DIMM) that is widely used in computers due to its superior speed and capacity. It is a high-performance memory solution that enables faster processing times and higher system performance. Computers using this product are able to access memory quicker, which results in faster overall performance.The main features that make the IDT71V256SA12YI an ideal product for memory applications include its high density, fast access times, and cost-effective design. Its high-density memory allows for large amounts of data to be stored on a single DIMM. Its fast access times allow for fewer delays when transferring data between the memory and the computer. The cost-effectiveness of this product also helps to make it an attractive option for memory applications.The working principle of the IDT71V256SA12YI is based on the principles of Dynamic Random Access Memory (DRAM). This type of memory uses an array of cells to store data, which can be divided into individual bits. When a request is made to the memory, a voltage is applied to the requested bit. If the voltage is above a certain level, the bit is considered to be "on". If the voltage is below the specified level, the bit is considered to be "off".The IDT71V256SA12YI uses a technology called Static Column Address Strobe (SCAS) to improve the performance of its data access times. SCAS divides the memory array into multiple independent column address strobes, allowing the data to be accessed faster. This allows for faster access times for memory-intensive applications, such as video editing and gaming.The IDT71V256SA12YI is also equipped with error correction, which helps to prevent data corruption caused by incorrect voltage levels being applied to the cells. It also features an auto-refresh mode, which automatically refreshes the memory cells on a regular basis to ensure reliable data retention.The IDT71V256SA12YI is a versatile product that is suitable for a wide range of memory applications. Its fast access times and reliable performance make it an ideal solution for computer memory requirements. Its cost-effectiveness also makes it an attractive option in many industrial and commercial applications.

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