IDT71V65602S133BG

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Memory – IDT71V65602S133BG Application Field and Working Principle

IDT71V65602S133BG, a memory device manufactured by Integrated Device Technology (IDT), is an 8K x 32-bit SyncBurst SRAM. It is a low-power, high speed and low latency integrated device with 4-word burst architecture. It is an effective storage device for microcontrollers and system on chip applications that require fast access time and higher data throughput performance.

This memory device is made up of two major parts, a memory die and an interface die that are connected together using Flip Chip Ball Grid Array (BGA) technology. The Interface Die consists of an IDT Data Bypass Unit (DBU), logic control, address and register functions and the Frame Buffer memory arrays. The memory die is made up of the 8K words x 32-bits of SRAM memory array. The memory die and the interface die are further connected to each other by a wide interconnect bridge.

The SyncBurst SRAM uses advanced synchronous burst architecture and pipeline bursts up to four accesses. It provides burst read access time of only 4.5ns and burst write access time of only 10.0ns. It is ultra-low power and its Maximum active power for 4-word burst operation is 100mW. It follows the 3.3-V VDDI interface standard and has write enable (WE) and output enable (OE) signals. Additionally, it can operate in synchronous burst modes of size 2, 3 and 4.

The SyncBurst SRAM is specially designed for applications that are based on the Intel 8051, MCS51 and derived architectures. It offers speed and low power consumption to suit different applications, ranging from low-cost consumer appliances to more performance critical applications. It is also useful in applications where high speed low latency accesses are needed like embedded video systems.

In summary, the IDT71V65602S133BG is a low-power, high speed and low latency integrated device, which can be used for efficient storage applications in systems-on-chip and microcontrollers. It is specially designed for applications based on Intel 8051, MCS51, and derived architectures. The SyncBurst SRAM employs advanced synchronous burst architecture and pipeline bursts up to four accesses, supporting burst read access time of only 4.5ns and burst write access time of only 10.0ns.

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