IDT7164S20TP

The IDT7164S20TP is a silicon CMOS 16-bit low-power static random access memory (SRAM), ideal for applications requiring high storage capacity. With its tried-and-tested architecture, this versatile device can be used in demanding memory circuit designs, saving time and effort.

The IDT7164S20TP is a commercial static flow-through design that enables fast cycle times. It features an advanced address-to-output delay of 1 nanosecond (ns) and is packed with the highest-speed industrial grade features. The 7164 supports a standard 5-volt logic interface and is available in TSOP and SOIC packaging options.

The IDT7164S20TP works by using SRAM cells as the data storage element. The SRAM cell is fundamentally composed of six transistors, enabling two significant operations: read and write. Read operations are initiated through a single address line, whereas write operations consist of multiple address lines. Read and write operations are indicated by setting the appropriate data pins from logic high to logic low.

The IDT7164S20TP is well-suited for a variety of applications, including portable consumer electronics, networking, and digital signal and image processing. The high speed and low-power consumption make it an ideal choice for applications that require a lot of data handling. Additionally, the fast access times and low-power consumption make the IDT7164S20TP an efficient choice for industrial applications and real-time embedded systems.

Overall, the IDT7164S20TP is a great choice for those seeking a reliable and high-performance static random access memory. With its sophisticated design and superior speed, this device is well-suited for a wide range of memory applications.