IDT71V016SA20YI Allicdata Electronics
Allicdata Part #:

IDT71V016SA20YI-ND

Manufacturer Part#:

IDT71V016SA20YI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: IDT71V016SA20YI datasheetIDT71V016SA20YI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Base Part Number: IDT71V016
Description

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Memory is an important component in modern electronic products, and IDT71V016SA20YI is a special type of memory that can be used in many areas. This article will discuss the application field and working principle of the IDT71V016SA20YI memory.

IDT71V016SA20YI is a high speed asynchronous dynamic random access memory (DRAM). It is manufactured using high voltage advanced CMOS process technologies, and is available in various models and densities, ranging from 16-128Mbits. The IDT71V016SA20YI memory has a high speed 8-bit wide or 16-bit wide interface designed to provide easy interfacing to micro-controllers, microprocessors, and other digital systems. It has a low power consumption, a fast random cycle access time and an asynchronous burst read mode operation.

The IDT71V016SA20YI memory is ideal for use in audio/video (A/V) equipment, such as digital video cameras, digital video recorders, video games, portable media players, and digital televisions. It can also be used in smart phones, digital cameras, and other portable products for storing digital data. In addition, it can be used in embedded devices and industrial control systems for data storage.

The IDT71V016SA20YI memory works by use of two transistors and two capacitors. The two transistors act as a switch to establish the logical one and the logical zero. When a logical one is present, the two capacitors are charged, and when a logical zero is present, the capacitors are discharged. The capacitors then hold the state of logical one or zero until the switch is triggered again. This process is known as dynamic random access, or DRAM, and it is the basis of most modern memory devices.

The IDT71V016SA20YI memory also features an asynchronous burst read mode operation which allows faster data transfer speeds. The synchronous burst mode enables the memory to process data in bursts rather than byte by byte. This way, data can be transferred faster, allowing for quicker access and improved data throughput. This mode also reduces the power consumption of the memory, resulting in lower operating costs.

Overall, the IDT71V016SA20YI memory is an ideal choice for a variety of applications. Its low power consumption, fast random cycle access time and asynchronous burst read mode operation makes it suitable for audio/video equipment, smart phones, digital cameras, and embedded systems. Its ability to store digital data and process data in bursts makes it a good choice for efficient and cost-effective performance.

The specific data is subject to PDF, and the above content is for reference

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