IDT71V124SA12Y8 Allicdata Electronics
Allicdata Part #:

IDT71V124SA12Y8-ND

Manufacturer Part#:

IDT71V124SA12Y8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: IDT71V124SA12Y8 datasheetIDT71V124SA12Y8 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ
Base Part Number: IDT71V124
Description

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IDT71V124SA12Y8 is a high-performance static random access memory that is extensively used for medium- and large-scale logic markets. It is a popular choice for applications that require sustained high-speed performance or high-endurance, reliable performance. As a type of memory, the IDT71V124SA12Y8 is used in a variety of applications, such as data caching, data storage, and computing applications.

In terms of its application field, the IDT71V124SA12Y8 has wide applications in both consumer and industrial product sectors. As a consumer product, the memory is used for applications such as Distributed Processing (DP) servers and Network Attached Storage (NAS) systems. In these applications, it offers outstanding performance by providing highly dependable data storage and retrieval capabilities at high speeds. In the industrial product sector, the IDT71V124SA12Y8 is used in various applications such as programmable logic controller (PLC) systems, automated test equipment (ATE) systems, and robotics. As an industrial product, the memory is used to enable robust control over process monitoring, program execution, and data recollecting in some of the most demanding industrial applications.

The working principle of the IDT71V124SA12Y8 is based on the extension of the Dynamic Random Access Memory (DRAM) structure. It is based on the idea of having multiple memory cells (up to 256Mbitx8 ) that are interconnected in an organized structure. This allows the reading and writing operations to occur simultaneously, in addition to being exceptionally fast. In order to enable the simultaneous access to multiple memory cells, the access time of each cell is reduced to a fraction of the access time of a standard DRAM.

Furthermore, in order to ensure that the writes take place in the correct order, the IDT71V124SA12Y8 design contains a Double-Port algorithm that conducts pre-writes on the memory cells being accessed before actual writing takes place. Furthermore, the IDT71V124SA12Y8 uses charge leakage techniques and precharge circuits to improve its dependability. This way, the risks of data corruption or incorrect writing is reduced significantly.

In conclusion, the IDT71V124SA12Y 8 is a high-performance static random access memory that is extensively used in various applications such as Distributed Processing (DP) servers, Network Attached Storage (NAS) systems, programmable logic controller (PLC) systems, automated test equipment (ATE) systems, and robotics. Its working principle is based on the extension of the Dynamic Random Access Memory (DRAM) structure, and is designed to enable simultaneous access to multiple memory cells, as well as increased dependability.

The specific data is subject to PDF, and the above content is for reference

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