IDT71V124SA20TYG8 Allicdata Electronics
Allicdata Part #:

IDT71V124SA20TYG8-ND

Manufacturer Part#:

IDT71V124SA20TYG8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: IDT71V124SA20TYG8 datasheetIDT71V124SA20TYG8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 32-SOJ
Base Part Number: IDT71V124
Description

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Memory Application Field and Working Principle of IDT71V124SA20TYG8

IDT71V124SA20TYG8 is a type of static random access memory (SRAM), specially designed for FPGA and ASIC Power Management applications. It is a high performance, low power, low voltage device that can provide nonvolatile and non-volatile storage times of up to 20ns. Today, this type of memory has become increasingly popular for its space and power saving features.

Application Fields

The IDT71V124SA20TYG8 can be used in consumer and industrial applications. Its nonvolatility and non-volatility storage time makes it an ideal memory for FPGA, ASIC, and power management applications. In consumer appliances, this device can be used to store applications that require high performance and low power consumption. It is suitable for medical, automotive, and embedded systems, providing a good balance of performance, power savings, and small form factor.

In industrial applications, the IDT71V124SA20TYG8 is used in memory controllers, microprocessors, and FPGA applications. With its low power consumption and fast access times, it provides a good solution to high speed systems that need data retention even when power is lost. It can also be used in distributed storage systems, as it is able to store data quickly and reliably over a wide area.

Device Operation

The IDT71V124SA20TYG8 is a static random access memory device, meaning that its access time is independent of the data stored in it. This type of memory stores information in an organized grid of cells, which can be read and written to by a control signal. The cell size and access time may vary depending on the amount of data stored. The device consists of two parts- the memory array and the logic section.

The memory array contains the cells used for storing data. Each cell contains an address bus, data bus, and control signal. To read and write data from the memory array, the control signal is used to send the address and data signals to the memory array, and the corresponding locations are read and written to. The logic section is used to control the signals sent to the memory array, and it can also be used to enable fault tolerance in case of errors.

Advantages

The IDT71V124SA20TYG8 offers many advantages over other forms of memory. It is faster than other types of memory, providing a faster access time. It has a high data density and can store larger amounts of data than other types of memory. It is also low power and has a low operating voltage, allowing it to be used in applications that require low power. The device also has fault tolerance capabilities, making it less prone to data corruption.

Conclusion

The IDT71V124SA20TYG8 is a type of static random access memory that is well-suited for power management and embedded applications. It is optimized for low power and high performance, and is capable of providing a reliable storage solution. It can operate in many different applications, such as consumer and industrial applications, providing a reliable memory solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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