
Allicdata Part #: | IDT71V2559S80PFG-ND |
Manufacturer Part#: |
IDT71V2559S80PFG |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 4.5M PARALLEL 100TQFP |
More Detail: | SRAM - Synchronous ZBT Memory IC 4.5Mb (256K x 18)... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous ZBT |
Memory Size: | 4.5Mb (256K x 18) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 8ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3.135 V ~ 3.465 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
Base Part Number: | IDT71V2559 |
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Memory is an essential part of a computer, and its applications play a crucial role in improving overall performance. The IDT71V2559S80PFG memory chip is a dynamic random access memory (DRAM) chip produced by Integrated Device Technology and is capable of providing top-notch performance. This article will discuss the application fields and working principle of this particular memory chip.
Application Fields
The IDT71V2559S80PFG is designed for use in mobile computing devices, such as laptops and netbooks. It also finds application in industrial and embedded applications, as it is capable of providing higher information storage and faster access to data. This memory chip supports single, double and quad rank configurations, and its advanced configuration options allow for scalability and flexibility. In addition, its bi-directional data strobe (DQS) feature allows for high-speed communication between the memory chip and the memory controller. It is also designed with a thermal sensor which can be used for temperature monitoring, making it a great choice for use in extreme temperatures.
Working Principle
The IDT71V2559S80PFG memory chip is a dynamic random access memory (DRAM) chip. The basic working principle of this type of memory is that data is stored in an array of cells, each of which is composed of a capacitor and a transistor. A capacitor can charge and discharge, storing a small amount of data, while a transistor acts as a switch which controls the flow of electricity in and out of the cell. The charge stored in the capacitor determines whether a bit is ‘1’ or ‘0’. In order to access the content stored in a particular cell, the bit must be ‘refreshed’ by charging the capacitor to its full capacity. This “refreshing” process is known as “DRAM recharging”.
The IDT71V2559S80PFG features an internal voltage regulator, designed to keep the chip operating in an optimal voltage range, allowing for superior performance. In addition, the memory chip supports single, double and quad rank configurations, allowing for improved scalability. Finally, this memory chip contains a thermal sensor which is capable of monitoring temperatures in order to prevent overheating, making it well-suited for use in extreme temperatures.
Conclusion
The IDT71V2559S80PFG memory chip is a dynamic random access memory (DRAM) chip designed for use in mobile computing devices, as well as industrial and embedded applications. It is capable of providing high information storage and access speeds, and features an internal voltage regulator, an advanced configuration options, and a thermal sensor for temperature monitoring. The memory chip also supports single, double, and quad rank configurations, allowing for improved scalability. This makes the IDT71V2559S80PFG a great choice for any applications that require reliable, high-performance memory.
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