
Allicdata Part #: | IDT71V256SA12YI8-ND |
Manufacturer Part#: |
IDT71V256SA12YI8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 256K PARALLEL 28SOJ |
More Detail: | SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 12ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 28-BSOJ (0.300", 7.62mm Width) |
Supplier Device Package: | 28-SOJ |
Base Part Number: | IDT71V256 |
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Memory - IDT71V256SA12YI8 Application Field and Working Principle
Memory devices, such as the IDT71V256SA12YI8 (IDT) model, are an important part of system designs in any application. From embedded systems to medical imaging and beyond, memory devices are responsible for storing data and helping processors and other peripherals access the data quickly and efficiently.
The IDT71V256SA12YI8 is a synchronous static RAM (SRAM) device packaged in a 28-pin dual in-line package (DIP). It is designed to be used in applications such as automotive embedded microcontrollers, programmable logic controllers and other industrial control systems. The DIP package enables the device to have a low profile design that takes up relatively little board space and simplifies its mounting.
The IDT71V256SA12YI8 has a synchronous design, providing higher performance and efficient operation. It operates from a single 2.7V to 3.6V power source and features an asynchronous !CS and !OE interface. This SRAM device is ideal for fast cycle applications such as DSP and microcontroller-based systems. It has a cycle time of 12ns for both read and write operations and an access time of 11ns.
The IDT71V256SA12YI8 comprises two 256k-bit SRAMs internally. Each SRAM is organized into 16K words of 16 bits each. This enables the device to provide 32K words of 16 bits data storage and retrieval. The device also provides a !WP enable pin which allows the device to be write-protected. !WP pin is tied high to allow write operations.
The IDT71V256SA12YI8 has true oscillator inputs that enable it to be used with a variety of clock sources. This feature is useful for applications since it allows the part to be clocked from a variety of sources (including crystal oscillators) for optimum performance.
The IDT71V256SA12YI8 features a fast asynchronous !CS and !OE interface, providing a high performance real-time memory access. It supports normal, page and sector read/write operations and features device reset. All data and address pins are fully differential. This feature allows the device to be well-suited for noise-sensitive applications, such as automotive.
In conclusion, the IDT71V256SA12YI8 is a versatile SRAM device designed for use in automotive and industrial applications. It has a synchronous design with fast cycle and access times, an asynchronous !CS and !OE interface, true oscillator inputs, and is packaged in a low-profile DIP. This makes it an ideal choice for applications requiring high-performance memory access.
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