IDT71V2576YS150PF Allicdata Electronics
Allicdata Part #:

IDT71V2576YS150PF-ND

Manufacturer Part#:

IDT71V2576YS150PF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 100TQFP
More Detail: SRAM - Synchronous Memory IC 4.5Mb (128K x 36) Par...
DataSheet: IDT71V2576YS150PF datasheetIDT71V2576YS150PF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V2576
Supplier Device Package: 100-TQFP (14x14)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 3.8ns
Series: --
Clock Frequency: 150MHz
Memory Size: 4.5Mb (128K x 36)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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Memory: IDT71V2576YS150PF Application Field and Working Principle

The IDT71V2576YS150PF is an innovative DRAM (Dynamic Random Access Memory) product from Integrated Device Technology, Inc. (IDT). This device is a high speed, low-power memory device that enables improved memory system performance. It is a standard 8-bank, 8-bit wide SRAM (Static RAM) device, allowing up to 512K words of data to be stored in each device. It also features low latency, high bandwidth and integrated error correction.

Application Field

The IDT71V2576YS150PF is suitable for a variety of applications in the computer industry and has many advantages over conventional SDRAM devices. It can be used in embedded and portable products where low power is required, such as PDAs, cell phones and digital cameras. It can also be used in mobile applications such as laptops and other mobile devices.

In addition, the IDT71V2576YS150PF can be used in audio/video applications such as gaming systems, MIDI instruments and DVRs. Other applications include automotive systems, military and aerospace systems and telecommunications.

Working Principle

The working principle of the IDT71V2576YS150PF is based on the use of a single 8-bit wide data bus per chip. This allows a larger capacity DRAM chip to be used in a system without increasing the size of the chip package. Additionally, the use of a data bus reduces power consumption by allowing data to be shuttled between individual memory locations without consuming additional power. By using a bus-based design, data can be quickly transferred between different locations, allowing for improved system performance.

The IDT71V2576YS150PF also uses a low-power self-timed read/write architecture which minimizes current consumption. In addition, the device has an integrated error detection and correction feature which minimizes the impact of bit errors during data storage and retrieval. The device also uses a patented bursting mechanism to further reduce power consumption by allowing data to be transferred in bursts, rather than constantly refreshing the entire device.

Overall, the innovative design of the IDT71V2576YS150PF DRAM allows it to be used in a variety of applications which require improved memory system performance and low power consumption. It is an ideal device for memory-intensive applications such as audio/video, automotive, military and aerospace, telecommunications and embedded systems.

The specific data is subject to PDF, and the above content is for reference

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