IDT71V3576S150PF

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Memory: IDT71V3576S150PF Application Field and Working Principle

The IDT71V3576S150PF is a 256-kbit (32K × 8) static random access memory (SRAM), a type of memory device that is used in many electronic systems and applications. It is designed to provide an efficient and reliable way of storing digital information and is widely used in data storage, embedded systems, and other applications.

The IDT71V3576S150PF is an asynchronous SRAM that operates on a single 3.3V supply, providing data access times as low as 15ns. It features a high-speed address latch, low power consumption, and is organized as 32K × 8 bits. This device is pin and function compatible with the IDT7 LV3576S010FP.

Application Field

The IDT71V3576S150PF is suitable for applications requiring low-power and high-density memory. It is suitable for data storage for a variety of embedded systems with large data capacity requirements as well as for system-on-chip designs. This device is also suitable for storage in non-volatile memories, including SRAMs, EEPROMs and Flash memories.

The IDT71V3576S150PF is ideal for a variety of embedded systems, such as industrial automation equipment, automotive devices, medical systems, telecommunications infrastructure, and digital signal processing (DSP) systems. Additionally, it is well suited for many consumer electronics applications, such as GPS, mobile phones, digital cameras, and personal digital assistants (PDAs).

Working Principle

The IDT71V3576S150PF operates on the static random access memory (SRAM) principle. This means that the memory cells are not volatile and store the data without requiring a constant power supply. The cells are arranged in rows and columns, and the data is accessed by addressing the cells in the row and column using the Address Latch Enable (ALE) and the write enable (WE) inputs. When a row is addressed, the data in that row is outputted on a data bus.

The cell structure of the IDT71V3576S150PF is comprised of a pair of cross-coupled MOSFETs. The address data is clocked into the cell\'s address latch, which is then compared with the address from the address bus. If the addresses match, the data in the cell is transferred onto the data bus. Different combinations of address and data bits can enable multiple operations, such as writing and reading, which can be done simultaneously.

The IDT71V3576S150PF is a synchronous SRAM, meaning that the system clock is used to control the operation of the device. The clock is used to synchronize the operations in the memory cell, such as read and write. This makes the device more efficient and reliable, allowing it to handle large volumes of data and keep it accurate.

Conclusion

The IDT71V3576S150PF is a type of static random access memory (SRAM) device designed to provide an efficient and reliable way of storing digital information. It is suitable for applications requiring low power and high density memory, and is widely used in embedded systems, data storage, and other applications. It operates on the SRAM principle and is a synchronous SRAM, using the system clock to control the operation of the device. This makes it an efficient and reliable solution for memory applications.

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