IDT71V416L10Y

Memory - IDT71V416L10Y Application Field and Working Principle

The IDT71V416L10Y is a low-power, high-speed static random access memory (SRAM) device. It was designed for a variety of applications, including general-purpose RAMs for embedded programs, program stores for microcontrollers, system-on-chip caches and registers, medical imaging, digital signal processing, encryption, and programmable logic controllers.

The IDT71V416L10Y is available in 1Gbit 8x8K and 2Gbit 32x64K configurations, and a 1Gbit 8x8K version. The device\'s memory cells are organized as words and bytes, offering flexibility when mapping codes and data. The cells on each chip consist of 256Kb of SRAM, with a maximum simultaneous access time of 35ns, allowing for fast data access and processing.

The IDT71V416L10Y uses a standard SRAM technology arrangement of four transistors, which create an SRAM cell that stores one bit of data. The device has a data bus width of 8 bits, meaning that multiple words can be accessed simultaneously, allowing for faster read/write operations. The device can also support simultaneous read/write operations across multiple chips, allowing for further increases in speed.

The IDT71V416L10Y is designed to provide a low-cost solution for high-speed, high-capacity memory devices. The device is designed to operate from both 5V and 3.3V power supplies, allowing for flexible power usage. In addition, the device is designed to operate over a wide temperature range, allowing for reliable operation in harsh environments.

The IDT71V416L10Y also features an on-chip Error Detection and Correction (EDAC), which allows the device to detect and correct errors without reducing performance. This feature is important for applications that require high data integrity, such as medical imaging. Additionally, the device is designed to support many common industry standard interface protocols, including NAND, SPI, and I2C, providing a simple and cost-effective solution.

In summary, the IDT71V416L10Y is a low-power and high-speed static random access memory (SRAM) device. It is designed for applications such as general-purpose RAMs, program stores for microcontrollers, system-on-chip caches and registers, medical imaging, digital signal processing, encryption, and programmable logic controllers. The device features an 8-bit wide data bus, simultaneous read/write operations, EDAC, and flexible power supply and temperature range support.