IDT71V416S12YI

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Memory – IDT71V416S12YI Application Field and Working Principle

Integrated Device Technology (IDT) is a leading memory and electronics provider that develops, manufactures and markets advanced memory solutions. IDT71V416S12YI is a high-performance SRAM, ideal for off-chip storage applications requiring high throughput. It is based on IDT\'s advanced V-Series 9T SRAM technology, offering an optimal combination of high speed, low power and low density.

Applications

The IDT71V416S12YI is suitable for applications such as DSPs and CPU caches, consumer electronics, network communications, ASICs and System-on-Chip (SoC) designs. Its high-speed, low-power features make it an ideal solution for consumer electronics, gaming and automotive applications. The device also offers excellent system integration and scalability.

Technical Features

The IDT71V416S12YI is a 12-megabit static random access memory organized as 1,024K x 9. The device is available in an industry-standard 8-pin SOIC package, and operates over a single +3.3V power supply. It has a minimum access time of 10ns and a maximum clock frequency of up to 66MHz, providing high performance and low current consumption.

Operations

The operations in the IDT71V416S12YI is made up of 9-bit wide memory words located in 4K address locations. Reading and writing operations are performed through a synchronous interface, using 5 pins - Address-Latch Inputs (ALI), Address-Latch Outputs (ALO), Data In (DI), Data Out (DO), and Clock (CLK). On the rising edge of the CLK, data is read or written. The output-enable pin (OE) is used to control the flow of data from the device, allowing it to be suppressed or enabled as needed.

The IDT71V416S12YI also features burst operation, which allows access from an initial address, and can read multiple data words with a single transfer. This burst operation is split into three individual sequences – fixed, linear and inverse burst. In fixed burst mode, the memory generates an n-word sequence starting at the initial address, following the same number of address increments. In linear burst mode, the address increments can be either up or down after every read or write cycle. In inverse burst mode, the address decrements after each read or write cycle.

Power Modes

The IDT71V416S12YI also has several power modes, allowing the device to consume minimal power while maintaining full functionality. The device contains self-refresh mode, where it automatically refreshes data stored in memory without any external power supply or additional clock cycles. The device also features standby mode, which enables the device to stop pulses to all bits, thereby reducing power consumption and protecting previously stored data.

Conclusion

The IDT71V416S12YI is a high-performance SRAM designed for off-chip storage applications that require high throughput. Its advanced V-Series 9T SRAM technology offers the optimal combination of high speed, low power and low density, making it an ideal solution for consumer electronics, gaming, automotive and system-on-chip applications. The device features several power modes, burst operation, as well as self-refreshing functionality, allowing it to operate in low-power environments while also offering a high degree of scalability.

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