
Allicdata Part #: | IDT71V416VS10Y8-ND |
Manufacturer Part#: |
IDT71V416VS10Y8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 4M PARALLEL 44SOJ |
More Detail: | SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 4Mb (256K x 16) |
Write Cycle Time - Word, Page: | 10ns |
Access Time: | 10ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-BSOJ (0.400", 10.16mm Width) |
Supplier Device Package: | 44-SOJ |
Base Part Number: | IDT71V416 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IDT71V416VS10Y8 has grown since its introduction, proving itself to be an indispensable part of the memory technology landscape. It is a four-bank, low-voltage Synchronous Dynamic Random Access Memory (SDRAM) device, and it is used in a wide range of applications where high-speed data interface, high-capacity memory and low-voltage operation are necessary. Knowing the application field and working principle of the IDT71V416VS10Y8 is key to making the most of this memory device.
Application Field
The IDT71V416VS10Y8 is most commonly used in communications, storage and consumer electronic devices that require low-voltage, high-speed memory and data interface. It is used in a wide range of applications, including servers, routers and switches, as well as embedded systems, security systems, and audio/video applications. It is also used in automotive and medical applications such as image processing and navigation systems.
Working Principle
The IDT71V416VS10Y8 is a synchronous dynamic random access memory (SDRAM) device that is designed to operate at a low voltage. It uses an 8-bit bus to transfer data to and from a memory device, and a 10-bit address bus to address the memory device. It has a maximum transfer rate of 166MHz and a CAS latency of 2. The IDT71V416VS10Y8 also has integrated error correction code (ECC) to provide enhanced reliability. It is capable of burst transfers, burst refresh, and self refresh modes, giving it the flexibility to support different types of applications.
The IDT71V416VS10Y8 also offers a number of advanced features, such as write-through, data masking and multiplexing, to improve memory performance. It also has an optional instruction execution, providing the ability to execute code stored in the SDRAM. Additionally, the IDT71V416VS10Y8 offers support for the basic refresh mechanism and can be used to implement temperature compensated self refresh and/or temperature rise refresh schemes.
The IDT71V416VS10Y8 is an ideal solution for applications that require low-power, high-speed memory and data interface combined with features such as advanced error detection and correction, burst operation, and temperature compensated refresh. With its wide range of applications and features, the IDT71V416VS10Y8 is a reliable and cost-effective solution for reliable and high-performance memory devices.
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