IDT71V416YL12Y Allicdata Electronics
Allicdata Part #:

IDT71V416YL12Y-ND

Manufacturer Part#:

IDT71V416YL12Y

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IDT71V416YL12Y datasheetIDT71V416YL12Y Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Base Part Number: IDT71V416
Description

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Memory

The IDT71V416YL12Y is a type of dynamic random access memory (DRAM). It is widely used in a variety of industries, including computer and electronic systems, automotive and aerospace components, medical equipment, and telecommunications. The IDT71V416YL12Y is a high-bandwidth DRAM device, with 16Mbits of dynamic random access memory. The DRAM access time is 3.2 ns, while the industrial single-cycle access time is 1.8 ns.

Application Fields

The IDT71V416YL12Y is a type of highly advanced DRAM, which can be used in a variety of applications. It is often used in gaming consoles, in server-based applications, and in embedded applications. It can also be used in embedded systems, such as automation equipment, gaming consoles, and enterprise systems. In addition, it is often used in medical equipment, as it can provide a fast, reliable, and efficient access to data.

Working Principle

The IDT71V416YL12Y DRAM is a type of synchronous dynamic random access memory (SDRAM). It works by storing data in a memory cell, which is connected to a row address, column address, and data lines. The data is then provided to the memory array from the data lines. A row and column address is used to access the data stored in the memory cell. Once the row address is specified, data can be read and written from and to the memory cell.

Once data is stored in the memory cell, it is stored until the row address is changed. This reduces the need to constantly read and write data to the memory cell. The data stored in the memory cell is further organized into four banks, which provide simultaneous data access. This makes the IDT71V416YL12Y DRAM highly efficient and reliable.

Conclusion

The IDT71V416YL12Y DRAM is a highly advanced memory device, which is widely used in computer and electronics systems, automotive and aerospace components, medical equipment, and telecommunications. Its features, including 16Mbits of dynamic random access memory, 3.2ns access time and four banks organization, make it suitable for a variety of applications, such as gaming consoles and enterprise systems. The IDT71V416YL12Y DRAM works by storing data in a memory cell, which is connected to a row address, column address, and data lines, and can provide fast and reliable data access.

The specific data is subject to PDF, and the above content is for reference

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