IDT71V416YS10PH

Memory - IDT71V416YS10PH application field and working principle

IDT71V416YS10PH is a 4Mb (512K x8) SRAM device that is specifically designed for a wide range of applications, ranging from industrial to consumer. This device utilizes the advanced high-speed CMOS process that allows it to provide high speed, low power operation and high performance in the most demanding conditions. This is made possible by the combination of high-performance CMOS gates, low-voltage operation and advanced power management design.

The IDT71V416YS10PH is targeted at a range of applications including digital signal processing (DSP), instrumentation, medical, automotive and consumer electronics. The device is well suited for applications requiring large data storage that demands a low power consumption, low latency, significant memory space and high clock rate operations.

The IDT71V416YS10PH is fabricated on the advanced high-speed CMOS process allowing for the device to operate up to 133MHz and is also operates with a single-phase clock. The device is designed to provide a low-latency data transfer, allowing for its use in high-speed systems. The device has a wide range of data access modes that allows for data from one device to be shared among multiple devices. It also includes internal data protection to ensure the reliability of stored data.

The IDT71V416YS10PH is a high-speed, low-power SRAM device that is optimized for demanding embedded applications. The device provides a fast, power-efficient memory solution that can be used in a wide range of applications, from industrial to consumer. It includes a high-speed, low power, high-performance CMOS process, low-voltage operation and advanced power management design, making it an ideal choice for a wide range of embedded solutions.

The working principle of the IDT71V416YS10PH is that the data stored in the device is maintained in volatile memory, allowing for it to be quickly accessed. This principle is based on the fact that the data stored in the device is only accessible when the device is properly enabled by the system. This is done by providing an enable signal to the device, allowing the device to access the data stored in the memory. Data can be written or read from this memory as needed.

The IDT71V416YS10PH is a low power SRAM device that has been designed for a range of embedded applications. The device provides reliable storage and access to data, and its advanced CMOS process and low power operation allow it to meet the demands of various industrial and consumer applications. The device includes a wide range of data access modes and includes internal data protection to ensure the reliability of stored data.