IDT71V424YL15PHI8 Allicdata Electronics
Allicdata Part #:

IDT71V424YL15PHI8-ND

Manufacturer Part#:

IDT71V424YL15PHI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: IDT71V424YL15PHI8 datasheetIDT71V424YL15PHI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: IDT71V424
Description

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The IDT71V424YL15PHI8 is a high-performance CMOS static memory module that provides reliable, high-speed memory storage. It is used commonly in applications such as industrial controllers, handheld instrumentation, motor controls, and other embedded device applications. Its fast access time and low power requirements make it suitable for many applications requiring instantaneous, reliable memory.

The IDT71V424YL15PHI8 consists of four silicon micromemory arrays that can store 512Kbits of data. It features fast access times, write cycles, and is powered by 5V. This chip provides a cost-effective, reliable memory solution to be used in the most demanding applications.

The IDT71V424YL15PHI8 is powerful, versatile and cost-effective memory solution. It has a broad range of applications in areas such as memory controllers, automation and control, industrial instrumentation and motor control, robotics, and embedded systems.

The working principle of the IDT71V424YL15PHI8 is a combination of semiconductor technology and memory array design. It uses electron tunneling to read and write data within the chip. An electrons is injected into the cell and when it collides with another electron, the charge status of the cell is changed and the data reads. The cell is then reset using the cell read and write interface.

Writing data is done by applying a voltage to the write port. This causes an electron or hole to be injected into the cell. As the charge status of the cell is changed, a write cycle is initiated and the data is written into memory.

The IDT71V424YL15PHI8 features an innovative design, JTAG access, fast access times, and an extended temperature range, making it suitable for the most demanding applications. It is a low power and low cost solution that is ideal for industrial controllers, handheld instrumentation, motor control, and other embedded device applications.

The IDT71V424YL15PHI8 is a powerful and versatile memory solution. It offers fast access times, low power requirements, and reliable storage for demanding applications. Its user-friendly interface and extended temperature range make it ideal for a wide range of applications from embedded systems to memory controllers and automation and control.

The specific data is subject to PDF, and the above content is for reference

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