IDT71V546S100PF

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IDT71V546S100PF is a type of high performance, low-power, CMOS static Random Access Memory (SRAM) device, manufactured by Integrated Device Technology (IDT), a major supplier of programmable logic devices. The device features a synchronous design and operates from a standard 1.8 to 3.3V power supply. It is available in a TSSOP-16 surface mount package with a 64Kb size.

Application Field

The IDT71V546S100PF SRAM can be used in a wide range of applications which require fast access and data storage. These include embedded microcontrollers, digital signal processors, medical imaging systems, CCTV and multimedia applications, set-top boxes, satellite radio, office automation systems, gaming devices and many other electronics products. The device is also suitable for use in industrial and automotive applications, such as metering systems, noise and vibration monitoring, automotive engine control and automotive infotainment.

Working Principle

SRAMs are based on a ‘store once’ principle, meaning that the data is stored in memory permanently until it is replaced by a new set of data. This type of memory is known as non-volatile memory, as it does not require power to retain its contents. The IDT71V546S100PF device has an asynchronous, 2-port architecture, which ensures that there is no wait state or access time delay when accessing the memory. Additionally, the device utilizes an integrated write-only logic to ensure that data is not corrupted during write operations.

The IDT71V546S100PF SRAM device is capable of sustained data read and write transfer rates up to 4 MB/s and 3.4 MB/s, respectively. It is capable of accessing memory randomly, random-access and random-write operations, and is also suitable for burst mode and serial port operations. Furthermore, the device features an advanced self-timed write-cycle which enables a minimum cycle time of 1.696ns.

In conclusion, the IDT71V546S100PF is an ideal memory device for applications which require fast read and write access. Its low-power architecture allows for greater power efficiency, while its advanced self-timed write-cycle ensures that data can be written quickly and accurately.

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