
Allicdata Part #: | IDT71V65602S100BG8-ND |
Manufacturer Part#: |
IDT71V65602S100BG8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 9M PARALLEL 119PBGA |
More Detail: | SRAM - Synchronous ZBT Memory IC 9Mb (256K x 36) P... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | -- |
Base Part Number: | IDT71V65602 |
Supplier Device Package: | 119-PBGA (14x22) |
Package / Case: | 119-BGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 3.135 V ~ 3.465 V |
Memory Interface: | Parallel |
Access Time: | 5ns |
Series: | -- |
Clock Frequency: | 100MHz |
Memory Size: | 9Mb (256K x 36) |
Technology: | SRAM - Synchronous ZBT |
Memory Format: | SRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IDT71V65602S100BG8 is a low-to-mid-range memory device, categorized as a dual-port static RAM, that is best known for its ability to offer wide input/output programming flexibility. It is commonly used in applications that require simultaneous data access and storage, including networking, telecommunications and management of critical time-sensitive data, as well as low-complexity logic applications.
A static RAM is an integrated circuit (IC) storage-device, commonly used in computing and other electronic applications, that provides static random access memory (SRAM). SRAM is different from traditional dynamic random access memory (DRAM) in that it stores data bit-line (in a "static state"), meaning it does not need to be written or read in a single continuous operation. This makes SRAM faster than DRAM and is the common choice for designing computer systems with rapid processing speed.
The IDT71V65602S100BG8 has a three-port configuration, with two input/output ports and one port for data-flow control. Each of the two primary I/O ports are 16-bits wide, offering full-duplex data transfers of up to 32 bits at a time. This device is capable of providing the highest data-access speed of any existing SRAM device on the market, offering an astonishing 3.2 megabytes per second of throughput.
An important feature of this SRAM device is its programmable timing options. This allows circuitry designers to optimize the static RAM performance for specific applications. For example, the IDT71V65602S000BG8 has separate I/O timing intervals for both launching messages on bus and receiving messages from bus, as well as multiple power-saving modes for further memory optimization.It also has a wide selection of fully programmable I/O logic levels, allowing for seamless interface compatibility with various I/O circuits.
From a reliability perspective, the IDT71V65602S100BG8 is manufactured using a standard CMOS process, which is more reliable than DRAM, and it also has built-in error-correction circuitry that provides greater data security.
All these features make the IDT71V65602S100BG8 an ideal choice for many low-to-mid-range memory applications. It is suitable for use in a variety of systems, including voice and data networks, time-sensitive communication systems, highly sensitive data-processing operations, data storage within complex systems, and real-time critical applications.
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