IDT71V65802S100BG8 Allicdata Electronics
Allicdata Part #:

IDT71V65802S100BG8-ND

Manufacturer Part#:

IDT71V65802S100BG8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 119PBGA
More Detail: SRAM - Synchronous ZBT Memory IC 9Mb (512K x 18) P...
DataSheet: IDT71V65802S100BG8 datasheetIDT71V65802S100BG8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V65802
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 5ns
Series: --
Clock Frequency: 100MHz
Memory Size: 9Mb (512K x 18)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IDT71V65802S100BG8 memory belongs to static random access memory (SRAM). This type of memory uses static logic-based circuits to store data, which means that once power is removed from the memory device, the stored data is not lost. This type of memory is designed for use in specialized applications where a virtually unlimited number of data reads and writes are needed and where the data must never be lost.

The IDT71V65802S100BG8 is an 8 Megabit (Mb) memory device, with an 8-bit data bus. It is intended for use in industrial, medical and military applications that require high speed and low power consumption. This device has been tested to operate in temperatures ranging from -40°C to 85°C, making it well suited for rugged applications.

The IDT71V65802S100BG8 utilizes Network-on-Chip (NoC) technology, which helps reduce power consumption, increase bandwidth and decrease latency. This memory is a dual-ported chip with two independent ports, which allows two devices to simultaneously access the same data, making it suitable for data synchronization operations. The IDT71V65802S100BG8 also has an automatic energy saving mode, which helps to reduce power consumption when not in use, resulting in increased battery life.

The IDT71V65802S100BG8 also has an array of built-in error checking and correction (ECC) algorithms, which provides data integrity and enhanced protection against data corruption. It also allows for error correction and dynamic programming, which is useful for applications requiring frequent updates or alterations, such as video and audio applications. The device is easy to configure and uses industry standard serial peripheral interface (SPI).

The IDT71V65802S100BG8 utilizes a dual-port access scheme and is based on synchronous SRAM architecture. The device has an internal oscillator, which eliminates the need for an external clock source. Each port has its own write buffer and command interface, providing simultaneous access to the memory. It also has built-in parity and EDC checks to ensure data integrity.

Data is stored in cells, which are located within the array. Each cell can store one data bit, and the memory is organized in banks and blocks. The device has a high clock speed of 100 MHz, allowing it to perform read and write operations in as little as 15ns. The IDT71V65802S100BG8 supports up to 16,384 address locations and can be used in both 8-bit and 16-bit data bus applications.

The IDT71V65802S100BG8 is well suited for applications requiring high-speed, low-power operation and maximum data integrity. It is an ideal choice for applications such as industrial controllers, medical and military equipment, portable devices and data synchronization. The device is rugged and reliable, and offers an array of built-in error-checking and correction algorithms for enhanced data protection. Its low power consumption and wide operating temperature range make it perfect for even the most extreme applications.

The specific data is subject to PDF, and the above content is for reference

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