IPB200N25N3GATMA1

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The IPB200N25N3GATMA1 is a single-gated MOSFET Field Effect Transistor (FET). It is designed for use in high-performance applications that require low on-state resistance, fast switching times, and high-gate capacitance ratings. This type of FET is often used in high-voltage and high-power applications, such as power conditioning and control circuits, power switching, and power conversion. The IPB200N25N3GATMA1 also has a wide operating temperature range and long-term reliability.

In general, FETs are three-terminal devices composed of a source, drain, and gate. They are based on the principle of controlling the flow of electrons between two terminals, the source and the drain, by applying a voltage to a third terminal, the gate. A positive voltage applied to the gate creates an electric field that attracts the electrons from the source and allows them to flow from the source to the drain of the FET. Conversely, a negative voltage on the gate causes the electrons to be repelled from the drain and brakes the flow of electrons.

The IPB200N25N3GATMA1 is a N-Channel MOSFET, meaning that it allows electrons to flow from the source to the drain when a voltage is applied to the gate. The IPB200N25N3GATMA1 has a drain-source breakdown voltage (BVDSS) of 200V and a maximum continuous drain current (ID) of 25A. It also has a low drain-source on-state resistance (RDS(on)) of 3 milliohms and a maximum gate-source voltage (VGS) of ±10V. These features make it suitable for applications requiring high voltage, high current, and low conduction loss.

A common application for the IPB200N25N3GATMA1 is in the control of switched-mode power supplies (SMPS). In such applications, the external power switch used may need to handle large currents, control the input impedance of the power supply, and minimize power losses due to the on-state resistance of the switch. The IPB200N25N3GATMA1 satisfies these criteria by having a low RDS(on) value and a fast switching speed, making it an ideal choice for SMPS applications.

The IPB200N25N3GATMA1 is also sometimes used in the control of DC-DC converters, such as buck converters. In these applications, the FET is used to switch current on the primary side of the DC-DC converter and allow current to flow through the inductor on the secondary side. This switching action requires precise control of the gate voltage, which is provided by the gate-source voltage rating of the IPB200N25N3GATMA1.

In general, the IPB200N25N3GATMA1 is a versatile FET that is suitable for a wide range of high-voltage, high-power applications. Its low on-state resistance, high gate capacitance, wide operating temperature range, and long-term reliability make it an ideal choice for use in SMPS, DC-DC converter, and other high-power applications.

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