IPB26CNE8N G

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The IPB26CNE8N G is an N-Channel enhancement-mode field-effect transistor (FET). This transistor type is commonly used for low-frequency applications such as model-rockets and power amplifiers. Specifically, this type of transistor has a gate threshold voltage of 6V and a [maximum] drain voltage of 26V. These characteristics make the IPB26CNE8N G a great choice for non-critical applications that require low current and voltage limitations.

The field-effect transistor is widely-used due to its inherent advantages over traditional current-controlled transistors. FETs utilize gate voltages rather than current sources to control the flow of current, making them well-suited for applications that require low-power operation. FETs also possess a fast switching speed, enabling them to drive large signals over relatively long distances. Finally, FET transistors are immune to certain forms of distortion that can be encountered when using current-controlled transistors.

The IPB26CNE8N G is a single-gate FET, meaning that only one voltage is necessary to activate the transistor and cause current to flow across the drain to the source. This type of FET is often used in linear amplification applications due to its low power requirements and ability to reproduce varying signals accurately. Additionally, single-gate FETs are commonly used in analog switches, audio filters, and RF circuits.

The IPB26CNE8N G is a depletion-mode device, meaning that when the gate voltage is at its threshold voltage of 6V or below the device is off and does not allow current to flow across its drain and source terminals. To activate the device, a positive voltage must be applied to the gate terminal, which then creates a region of negative voltage at the source-drain p-n junction, allowing current to flow across the drain to source.

The IPB26CNE8N G is well-suited for applications that require low power and low voltage operation, such as model-rockets and power amplifiers. Applications that require a higher power rating, such as a DC motor or high-power audio amplification, should use a more robust FET. The IPB26CNE8N G is an excellent choice for low-frequency applications that require low power and low voltage operation.

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