IPB260N06N3GATMA1 Allicdata Electronics
Allicdata Part #:

IPB260N06N3GATMA1TR-ND

Manufacturer Part#:

IPB260N06N3GATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 27A TO263-3
More Detail: N-Channel 60V 27A (Tc) 36W (Tc) Surface Mount D²PA...
DataSheet: IPB260N06N3GATMA1 datasheetIPB260N06N3GATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 11µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 36W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 25.7 mOhm @ 27A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IPB260N06N3GATMA1 is a high-performance, low-voltage, N-Channel MOSFET. It is designed to provide efficient switching and high-level performance in mobile, laptop and automotive applications. The device features an industry-standard footprint and low input capacitance, allowing for easy integration into a variety of applications.

The IPB260N06N3GATMA1 is a P-Channel MOSFET, and is the most commonly used voltage-controlled switch. It consists of three terminal devices, the source, the drain and the gate. The gate controls the current flow between the source and the drain, and is connected to the controlling voltage source. When the gate voltage is increased, the current flowing from the source to the drain is increased, and vice versa.

The IPB260N06N3GATMA1 is a low-voltage, N-Channel MOSFET, designed specifically for mobile, laptop and automotive applications. The device has an RDS(on) rating of 0.06 ohms and an Id(on) rating of 26A, making it one of the most efficient switches available. The device has a wide operating range, with a gate-source voltage (Vgs) of 3.3V to -20V. Additionally, the device has low gate capacitance, allowing for fast switching times.

The device can be used in a variety of applications, from power management to remote sensing. It can be used in switching converters, amplifier stages and motor control circuits. The device is also capable of high-volume, high-current switching, making it ideal for automotive, home appliance and industrial applications. Additionally, the device has a high immunity to thermal de-rating, making it suitable for a wide range of environments.

The device is also easy to use, with easy to understand parameters. The drain-source and gate-source resistances are easily adjustable, and the thermal protection feature ensures the device functions reliably at extreme temperatures. The device is also rated to be highly reliable and durable, making it suitable for long-term use in a range of operating environments. In addition, the device can be used in both low and high-side switching applications, making it suitable for a range of applications.

Overall, the IPB260N06N3GATMA1 is a high-performance, low-voltage, N-Channel MOSFET that is ideal for mobile, laptop and automotive applications. Its high efficiency and low gate capacitance make it ideal for fast and reliable switching, while its thermal protection feature makes it suitable for a wide range of environments. Its easy to adjust resistances and long-term reliability make it a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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