Allicdata Part #: | IPB260N06N3GATMA1TR-ND |
Manufacturer Part#: |
IPB260N06N3GATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 27A TO263-3 |
More Detail: | N-Channel 60V 27A (Tc) 36W (Tc) Surface Mount D²PA... |
DataSheet: | IPB260N06N3GATMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 11µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 36W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 25.7 mOhm @ 27A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IPB260N06N3GATMA1 is a high-performance, low-voltage, N-Channel MOSFET. It is designed to provide efficient switching and high-level performance in mobile, laptop and automotive applications. The device features an industry-standard footprint and low input capacitance, allowing for easy integration into a variety of applications.
The IPB260N06N3GATMA1 is a P-Channel MOSFET, and is the most commonly used voltage-controlled switch. It consists of three terminal devices, the source, the drain and the gate. The gate controls the current flow between the source and the drain, and is connected to the controlling voltage source. When the gate voltage is increased, the current flowing from the source to the drain is increased, and vice versa.
The IPB260N06N3GATMA1 is a low-voltage, N-Channel MOSFET, designed specifically for mobile, laptop and automotive applications. The device has an RDS(on) rating of 0.06 ohms and an Id(on) rating of 26A, making it one of the most efficient switches available. The device has a wide operating range, with a gate-source voltage (Vgs) of 3.3V to -20V. Additionally, the device has low gate capacitance, allowing for fast switching times.
The device can be used in a variety of applications, from power management to remote sensing. It can be used in switching converters, amplifier stages and motor control circuits. The device is also capable of high-volume, high-current switching, making it ideal for automotive, home appliance and industrial applications. Additionally, the device has a high immunity to thermal de-rating, making it suitable for a wide range of environments.
The device is also easy to use, with easy to understand parameters. The drain-source and gate-source resistances are easily adjustable, and the thermal protection feature ensures the device functions reliably at extreme temperatures. The device is also rated to be highly reliable and durable, making it suitable for long-term use in a range of operating environments. In addition, the device can be used in both low and high-side switching applications, making it suitable for a range of applications.
Overall, the IPB260N06N3GATMA1 is a high-performance, low-voltage, N-Channel MOSFET that is ideal for mobile, laptop and automotive applications. Its high efficiency and low gate capacitance make it ideal for fast and reliable switching, while its thermal protection feature makes it suitable for a wide range of environments. Its easy to adjust resistances and long-term reliability make it a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IPB26CN10NGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 35A TO26... |
IPB26CNE8N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 85V 35A TO263... |
IPB230N06L3GATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 30A TO263... |
IPB260N06N3GATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 27A TO263... |
IPB25N06S3-25 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 25A D2PAK... |
IPB25N06S3L-22 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 25A D2PAK... |
IPB200N15N3GATMA1 | Infineon Tec... | 1.08 $ | 1000 | MOSFET N-CH 150V 50A TO26... |
IPB200N25N3GATMA1 | Infineon Tec... | -- | 4000 | MOSFET N-CH 250V 64A TO26... |
IPB22N03S4L15ATMA1 | Infineon Tec... | 0.7 $ | 1000 | MOSFET N-CH 30V 22A TO263... |
IPB240N04S41R0ATMA1 | Infineon Tec... | 1.1 $ | 1000 | MOSFET N-CH TO263-7N-Chan... |
IPB240N03S4LR9ATMA1 | Infineon Tec... | 1.2 $ | 1000 | MOSFET N-CH TO263-7N-Chan... |
IPB240N03S4LR8ATMA1 | Infineon Tec... | 1.44 $ | 1000 | MOSFET N-CH TO263-7N-Chan... |
IPB240N04S4R9ATMA1 | Infineon Tec... | -- | 1970 | MOSFET N-CH TO263-7N-Chan... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...