Allicdata Part #: | IPB25N06S3-25-ND |
Manufacturer Part#: |
IPB25N06S3-25 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 25A D2PAK |
More Detail: | N-Channel 55V 25A (Tc) 48W (Tc) Surface Mount PG-T... |
DataSheet: | IPB25N06S3-25 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 24.8 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1862pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 48W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO263-3-2 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The IPB25N06S3-25 is a N-Channel MOSFET transistor used in many applications, including power management and signal amplification. With low gate threshold voltage, it has a high performance with a body lining technique making the output devices capable of operating over a wide temperature range. The robustness and versatility of its structure makes this device ideal to be used in a wide variety of devices.
The main purpose of this device is to provide a very stable output voltage in a broad range of operating temperature. It also provides a very small capacitance that allows for a small signal path of data signals such as high-frequency radio-frequency signals. This makes the device perfect for applications related to radio-frequency, including detector, mixers or amplifiers.
The working principle of IPB25N06S3-25 is based on a simple "mixer" type design. This device has two main components; a field-effect transistor (FET) and a resistor. An electric voltage is applied across the two components, thus causing a change in the resistance of the resistor. This variation of resistance creates an oscillation of power, thus allowing for signal transformation from AC signals to DC signals.
In its application field, IPB25N06S3-25 is mainly used to achieve high currents with a small die. This makes it an ideal device for different circuits like power management, such as LED lighting, or signal amplification for communications. Due to its high performance and small die, it is used in various consumer electronic devices such as laptops, televisions and mobile phones. It can also be used in electronic medical equipment, automotive electronics, consumer appliances, and more.
IPB25N06S3-25 is also used in solar power management technologies. It can be used in solar cell power with inbuilt power inverters to efficiently convert the solar energy into AC or DC power. It is also used in photovoltaic panels, which are fitted with small solar cells. These solar cells absorb the sun’s energy and convert it into electrical energy.
In addition to its applications in solar power, IPB25N06S3-25 is used in many other power management tasks such as audio playback and digital signal processing. It is also used for computing technologies such as microprocessors, memory and digital-signal processing. Furthermore, this device can be used in wireless communication, satellite solar power and other wireless technologies.
The IPB25N06S3-25 is a versatile and fast response transistor that is suitable for power management, signal processing, transmission and amplification. It offers low capacitance, low threshold voltage, and a broad frequency range of operating temperature. It also enables efficient use of solar energy due to its small die and robust nature. As such, this device can provide an efficient means to transfer AC and DC power with sensitive signal processing.
The specific data is subject to PDF, and the above content is for reference
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