Allicdata Part #: | IPB240N03S4LR8ATMA1-ND |
Manufacturer Part#: |
IPB240N03S4LR8ATMA1 |
Price: | $ 1.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH TO263-7 |
More Detail: | N-Channel 30V 240A (Tc) 300W (Tc) Surface Mount PG... |
DataSheet: | IPB240N03S4LR8ATMA1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.29800 |
Vgs(th) (Max) @ Id: | 2.2V @ 230µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | PG-TO263-7-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 26000pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 380nC @ 10V |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 0.76 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 240A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPB240N03S4LR8ATMA1 belongs to a family of semiconductor components known as insulated-gate field-effect transistors (IGFETs) or metal-oxide-semiconductor field-effect transistors (MOSFETs). In particular, the IPB240N03S4LR8ATMA1 is a single-channel, enhancement-mode vertical MOSFET, which has two source terminals, one drain terminal, and one gate terminal. The purpose of such a device is to control the flow of current between the source and drain terminal using a voltage applied to the gate terminal. It is mainly used in various power management and automotive applications.
Since the IPB240N03S4LR8ATMA1 is single-channel in nature, it can only be used in simple circuits. However, its advantages include low gate capacitance and high power dissipation, making it an ideal option for high-power automotive and other applications. It is also very efficient in withstanding fluctuations in temperature, making it suitable for use in high-temperature environments.
The IPB240N03S4LR8ATMA1’s working principle is based upon the fact that when a voltage is applied to the gate terminal, it acts on an insulated-gate layer (IGL), which in turn controls the current flow between the source and drain terminals. When a negative voltage is applied to the gate terminal, it creates a repulsive force between the drain and source terminals, resulting in a decrease in current flow. Similarly, when a positive voltage is applied to the gate terminal, it creates an attractive force between the drain and source terminals, resulting in an increased current flow.
In terms of applications, the IPB240N03S4LR8ATMA1 is capable of meeting a wide range of power management and automotive requirements. Its low gate capacitance makes it suitable for use in motor drives, DC-DC power converters, and other switching and power distribution circuits. Additionally, its high power dissipation and temperature-stability enable it to be used in automotive power steering and engine control applications.
The IPB240N03S4LR8ATMA1 is suitable for various power management and automotive applications due to its low gate capacitance, high power dissipation and temperature stability. Its working principle is based upon the fact that when a voltage is applied to the gate terminal, it controls the current flow between the source and drain terminals. This makes it an ideal device for high-power automotive and other applications.
The specific data is subject to PDF, and the above content is for reference
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