IPB240N03S4LR8ATMA1 Allicdata Electronics
Allicdata Part #:

IPB240N03S4LR8ATMA1-ND

Manufacturer Part#:

IPB240N03S4LR8ATMA1

Price: $ 1.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO263-7
More Detail: N-Channel 30V 240A (Tc) 300W (Tc) Surface Mount PG...
DataSheet: IPB240N03S4LR8ATMA1 datasheetIPB240N03S4LR8ATMA1 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.29800
Stock 1000Can Ship Immediately
$ 1.44
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: PG-TO263-7-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 26000pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 0.76 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPB240N03S4LR8ATMA1 belongs to a family of semiconductor components known as insulated-gate field-effect transistors (IGFETs) or metal-oxide-semiconductor field-effect transistors (MOSFETs). In particular, the IPB240N03S4LR8ATMA1 is a single-channel, enhancement-mode vertical MOSFET, which has two source terminals, one drain terminal, and one gate terminal. The purpose of such a device is to control the flow of current between the source and drain terminal using a voltage applied to the gate terminal. It is mainly used in various power management and automotive applications.

Since the IPB240N03S4LR8ATMA1 is single-channel in nature, it can only be used in simple circuits. However, its advantages include low gate capacitance and high power dissipation, making it an ideal option for high-power automotive and other applications. It is also very efficient in withstanding fluctuations in temperature, making it suitable for use in high-temperature environments.

The IPB240N03S4LR8ATMA1’s working principle is based upon the fact that when a voltage is applied to the gate terminal, it acts on an insulated-gate layer (IGL), which in turn controls the current flow between the source and drain terminals. When a negative voltage is applied to the gate terminal, it creates a repulsive force between the drain and source terminals, resulting in a decrease in current flow. Similarly, when a positive voltage is applied to the gate terminal, it creates an attractive force between the drain and source terminals, resulting in an increased current flow.

In terms of applications, the IPB240N03S4LR8ATMA1 is capable of meeting a wide range of power management and automotive requirements. Its low gate capacitance makes it suitable for use in motor drives, DC-DC power converters, and other switching and power distribution circuits. Additionally, its high power dissipation and temperature-stability enable it to be used in automotive power steering and engine control applications.

The IPB240N03S4LR8ATMA1 is suitable for various power management and automotive applications due to its low gate capacitance, high power dissipation and temperature stability. Its working principle is based upon the fact that when a voltage is applied to the gate terminal, it controls the current flow between the source and drain terminals. This makes it an ideal device for high-power automotive and other applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IPB2" Included word is 13
Part Number Manufacturer Price Quantity Description
IPB26CN10NGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 35A TO26...
IPB26CNE8N G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 85V 35A TO263...
IPB230N06L3GATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 60V 30A TO263...
IPB260N06N3GATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 60V 27A TO263...
IPB25N06S3-25 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 55V 25A D2PAK...
IPB25N06S3L-22 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 55V 25A D2PAK...
IPB200N15N3GATMA1 Infineon Tec... 1.08 $ 1000 MOSFET N-CH 150V 50A TO26...
IPB200N25N3GATMA1 Infineon Tec... -- 4000 MOSFET N-CH 250V 64A TO26...
IPB22N03S4L15ATMA1 Infineon Tec... 0.7 $ 1000 MOSFET N-CH 30V 22A TO263...
IPB240N04S41R0ATMA1 Infineon Tec... 1.1 $ 1000 MOSFET N-CH TO263-7N-Chan...
IPB240N03S4LR9ATMA1 Infineon Tec... 1.2 $ 1000 MOSFET N-CH TO263-7N-Chan...
IPB240N03S4LR8ATMA1 Infineon Tec... 1.44 $ 1000 MOSFET N-CH TO263-7N-Chan...
IPB240N04S4R9ATMA1 Infineon Tec... -- 1970 MOSFET N-CH TO263-7N-Chan...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics