Allicdata Part #: | IPD10N03LA-ND |
Manufacturer Part#: |
IPD10N03LA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 30A DPAK |
More Detail: | N-Channel 25V 30A (Tc) 52W (Tc) Surface Mount PG-T... |
DataSheet: | IPD10N03LA Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1358pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 52W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 10.4 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 20µA |
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The IPD10N03LA is a part of a broad family of MOSFETs (metal-oxide-semiconductor field-effect transistors) used in many applications in both the consumer and industrial markets. Its key features include low on-resistance, low power consumption, and high-speed switching capability. In this article, we will explore the common applications and working principles of IPD10N03LA.
Application Fields
The IPD10N03LA is used in a variety of applications, ranging from low-power switching in consumer electronics to high-power applications, such as motor control and power supplies. In consumer electronics, the IPD10N03LA can be used for switching power supplies as well as for controlling pressure and temperature in automotive applications. The MOSFET can also be used for power conversion in white goods and battery charger solutions. In industrial applications, the IPD10N03LA is used for motor control applications and in power distribution systems. It typically comes in a TO-220, TO-252 and IPAK package.
Working Principles
MOSFETs function as solid-state switches that act as a gate between the voltage source and the load. They are controlled by a gate voltage, which is regulated to control the flow of current. When the gate voltage is low, the drain-source path will be open, and the transistor is “on.” When the gate voltage is high, the drain-source path will be closed, and the transistor is “off.”
In the case of the IPD10N03LA, it is a P-channel MOSFET that has an inherently low on-resistance due to its silicon construction. The on-resistance is referred to as “RDS(ON),” and it is typically less than 1 mΩ in this MOSFET. This is why it is often preferred for power conversion applications, since it can offer significantly less power loss than other MOSFETs.
The IPD10N03LA is also designed to handle large voltages and currents. It can be used in applications that require switching up to 100 V and 13 A, making it well-suited for many high-power applications. Additionally, this MOSFET can switch with a transition speed of 300 ns, making it suitable for high-speed applications.
Conclusion
The IPD10N03LA is a popular MOSFET that is used in a wide range of applications, from consumer electronics to industrial systems. Its key features include low on-resistance, low power consumption, and high-speed switching capability. It is designed to support a wide range of voltages and currents, making it suitable for applications such as motor control, power supplies, and power distribution.
The specific data is subject to PDF, and the above content is for reference
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