Allicdata Part #: | IPD110N12N3GATMA1TR-ND |
Manufacturer Part#: |
IPD110N12N3GATMA1 |
Price: | $ 0.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 120V 75A TO252-3 |
More Detail: | N-Channel 120V 75A (Tc) 136W (Tc) Surface Mount PG... |
DataSheet: | IPD110N12N3GATMA1 Datasheet/PDF |
Quantity: | 22500 |
2500 +: | $ 0.61746 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 120V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 83µA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4310pF @ 60V |
FET Feature: | -- |
Power Dissipation (Max): | 136W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IPD110N12N3GATMA1 is a type of power MOSFET, specifically a 3rd-generation N-channel MOSFET. This cutting-edge component of modern electronics uses extremely precise, fast switching speeds and small form factor. This makes it suitable for a wide range of applications, ranging from high-frequency switching to power conversion, and more.
One of the most popular uses of the IPD110N12N3GATMA1 is in the production of high-efficiency power converters. In these applications, the component is used to convert the electrical energy produced by a power supply into the desired form, frequency, and voltage. This is done by controlling the switching of electrical current between devices. This allows the power converter to operate with efficiency and accuracy that is often difficult to achieve with other components.
Another common application for the IPD110N12N3GATMA1 is in the motors, switches, and actuators that are used in contemporary robotics and automation applications. The component utilizes a three-dimensional integrated circuit (3DIC) design that provides low-noise and robust switching performance. This allows for fast switching speeds, reducing the time required to adjust or control the motion of a robotic device.
In addition to robotics and automation, the IPD110N12N3GATMA1 is often used in power supply designs and voltage regulators. When integrated into a power supply or voltage regulator, this component serves to switch and maintain a precise voltage level in a circuit. By operating with low-noise, fast switching ability, the IPD110N12N3GATMA1 can ensure efficient, reliable operation of the circuit it is serving.
The trend towards smaller components also suggests that IPD110N12N3GATMA1 will find its place in the myriad of applications that require very small, efficient components. For example, the component could be used in ever-shrinking microelectronic systems such as cell phones, tablets, and other mobile technologies. This shows the versatility and utility of the IPD110N12N3GATMA1, with its capability for reliable operation across a wide range of applications.
The working principle behind the IPD110N12N3GATMA1 is based on the flow of electrical current from a source to a load. The component actuates an input voltage to the gate of a MOSFET, causing a current to flow between the source and the load. This enables the component to control the amount of current that flows through the load. This process makes it an invaluable tool for managing the flow of electricity in a wide variety of applications.
In summary, the IPD110N12N3GATMA1 is a versatile and powerful electronic component in the modern world. Its fast switching speeds and small form factor makes it suitable for a wide range of applications, from high-frequency switching to robotic device control. Its 3DIC design ensures reliable operation, making it a go-to component for power supply and voltage regulator designs. Finally, its working principle of controlling the flow of current with an input voltage to the gate of a MOSFET demonstrates its utility for other projects requiring precise electricity management. With its growing importance and capabilities, the IPD110N12N3GATMA1 is certain to remain a critical component in the years to come.
The specific data is subject to PDF, and the above content is for reference
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