Allicdata Part #: | IPD16CN10NG-ND |
Manufacturer Part#: |
IPD16CN10N G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 53A TO252-3 |
More Detail: | N-Channel 100V 53A (Tc) 100W (Tc) Surface Mount PG... |
DataSheet: | IPD16CN10N G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 53A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 61µA |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3220pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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In today\'s applications, more and more integrated circuits are used, so a variety of devices are used to extend their reach. A typical device is the IPD16CN10N G, used in a variety of applications. This article will provide an introduction to the IPD16CN10N G and discuss its application field and working principle.
IPD16CN10N G is actually a field effect transistor, or FET. It is a special type of transistor, where the current flow is controlled by a transmission gate connected to a gate structure with a gate voltage. This voltage controls the current flow between the source and drain of the transistor. IPD16CN10N G is of the metal-oxide-semiconductor field-effect-transistor type, or MOSFET. It is formed of n+ silicon and features an Insulated Gate. The transistor has an input capacitance of 100pF, a saturation voltage of 12V, a gate-drain capacitance of 2.8pF, and an isolation resistance of 500 ohms.
The application field of the IPD16CN10N G is diverse. It is used extensively in power supply applications, such as in switching regulators and power amplifiers. It is also used in motor control applications, such as in AC motors and universal motors. In addition, it is used in communications applications, such as for modulating and demodulating signals. In all of these cases, it serves as a switch or amplifier. It is also used in various other fields, such as automotive, industrial, and medical electronics.
The working principle of the IPD16CN10N G is based on the Gate-Source capacitance (CGS) and the Gate-Drain capacitance (CGD). When there is no voltage applied to the Gate, the capacitance between the Gate and the Source (CGS) and the capacitance between the Gate and the Drain (CGD) are both zero. However, when a voltage is applied, a reverse bias builds up between the Gate and the Source, while a forward bias builds up between the Gate and the Drain. This creates a voltage gradient from the Gate to the Source and between the Gate and the Drain. This voltage gradient is used to control the current flow in the device.
The IPD16CN10N G is a powerful and versatile device, with a wide range of applications. It is used in many applications and serves as an effective switch and amplifier. Its working principle is based on the Gate-Source and Gate-Drain capacitances, which create a voltage gradient from the Gate to the Source and between the Gate and the Drain. Thanks to this voltage gradient, the current flow can be effectively controlled.
The specific data is subject to PDF, and the above content is for reference
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