IPD70R360P7SAUMA1 Discrete Semiconductor Products

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The IPD70R360P7SAUMA1 is a Power MOSFET device developed by Infineon Technologies. It has a maximum drain-source voltage of 600 volts, a maximum gate threshold voltage of 8 volts, and a channel temperature range from -55 °C to 150 °C. It is also characterized by a low on-resistance of 70 mohms, gate charge up to 11.6 nC, and a maximum drain current of 8A.

Application Field

The IPD70R360P7SAUMA1 is designed for a wide range of applications in the field of power management and power conversion. It is best suitable for high and medium voltage power switches, such as in-line power supplies and batteries, as well as for low to medium power automotive, building and industrial automation. This device is suitable for high frequency DC-DC and AC-DC converters, allowing for high efficiency operations and less thermal stress.

Working Principle

The IPD70R360P7SAUMA1 utilizes a highly advanced MOSFET technology in order to provide the best performance with low on-resistance, low gate charge and fast switching. This technology is achieved by combining an advanced silicon substrate, an optimized silicon dioxide layer, and a high-performance polysilicon gate electrode. This combination creates a MOSFET device with superior performance, allowing for low on-resistance, low gate charge and high switching speeds.

This device is based on the n-type enhancement-mode power MOSFET technology. This type of technology utilizes the principle of charge and mass transport through the Gate-Oxide layer. The Gate Oxide layer acts as a barrier between the channel and gate and is responsible for preventing any charge from entering or leaving the channel and maintaining a fixed on-resistance.

When the voltage at the Gate exceeds the gate threshold voltage, the barrier created by the Gate Oxide layer breaks, allowing for conduction between the Drain and Source. As the current increases, the charge stored on the Gate-Oxide layer increases, thus increasing the on-resistance. This phenomenon can be used to precisely control the on-resistance of the device, thus controlling the current and power dissipation.

The IPD70R360P7SAUMA1 is designed to provide the best performance in switching applications, allowing for fast switching and low levels of power dissipation. Additionally, the device utilizes a low gate charge and maximum drain current capabilities, making it suitable for high frequency DC-DC and AC-DC converters. This device is also designed to survive in temperatures up to 150 °C.

In conclusion, the IPD70R360P7SAUMA1 is a high performance power MOSFET device developed by Infineon Technologies for the purpose of high and medium voltage power switches, automotive, building and industrial automation, and for DC-DC and AC-DC converters. It combines an advanced silicon substrate, an optimized silicon dioxide layer and a high performance polysilicon gate electrode to provide superior performance with low on-resistance and fast switching.

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