IPD75N04S406ATMA1 Allicdata Electronics
Allicdata Part #:

IPD75N04S406ATMA1TR-ND

Manufacturer Part#:

IPD75N04S406ATMA1

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 75A TO252-3-313
More Detail: N-Channel 40V 75A (Tc) 58W (Tc) Surface Mount PG-T...
DataSheet: IPD75N04S406ATMA1 datasheetIPD75N04S406ATMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 0.29000
10 +: $ 0.28130
100 +: $ 0.27550
1000 +: $ 0.26970
10000 +: $ 0.26100
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Vgs(th) (Max) @ Id: 4V @ 26µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-313
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 58W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPD75N04S406ATMA1 is a Logic Level N-Channel Power MOSFET, a type of field-effect transistor (FET), used for any type of switching or amplifier application. In general, an IPD75N04S406ATMA1 is a four-terminal device, with the source connected to the drain, the gate connected to its own bias network, and two excellent open connections between the two. Each device also contains a resistor and a series of large diodes, providing protection against overvoltage, under-voltage, and thermal runaway conditions. Due to its small size and cost-effectiveness, the IPD75N04S406ATMA1 is widely used in the automotive, industrial, home appliance, and communication industries.The IPD75N04S406ATMA1 is a single gate Field-effect transistor that uses a gate voltage to control the current flow between the source and the drain. This type of FET is also known as an enhancement mode N-channel MOSFET (e-MOSFET). The advantages of this type of device are that it requires very low input voltage, it has very low “ON” resistance, and it has very low power consumption.The working principle of the IPD75N04S406ATMA1 is fairly simple. When a voltage is applied to the gate terminal, the current between the source and the drain is increased. The voltage applied to the gate overcomes the built-in depletion resistance, allowing electrons to flow from source to drain. This is known as “intrinsic enhancement”.The resistance between the source and the drain (the RDS) depends on the voltage being applied to the gate. The higher the gate voltage, the lower the RDS, meaning that the current will be maximized when the highest gate voltage is applied. In other words, the resistance between the source and the drain is inversely proportional to the gate voltage.The maximum current of the IPD75N04S406ATMA1 is limited by the maximum drain current (IDmax) rating. As the current increases, the safety margin of the device decreases, and thus the device should not be operated beyond its rated maximum.The gate voltage of the IPD75N04S406ATMA1 should be kept below its threshold voltage VTH. This is to avoid the possibility of encountering a leakage current, which could potentially damage the device.To summarize, the IPD75N04S406ATMA1 is a single gate N-channel MOSFET which has low input voltages, low “ON” resistance, and low power consumption. Its working principle is that a gate voltage is applied to the device, which overcomes the built-in depletion resistance and allows current to flow between the source and the drain. The maximum current of the device is limited by its IDmax rating, and the gate voltage should not be over the threshold voltage VTH. Due to its cost-effectiveness and small size, the IPD75N04S406ATMA1 is widely used in a variety of industries.

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