
Allicdata Part #: | IPD75N04S406ATMA1TR-ND |
Manufacturer Part#: |
IPD75N04S406ATMA1 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 75A TO252-3-313 |
More Detail: | N-Channel 40V 75A (Tc) 58W (Tc) Surface Mount PG-T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.29000 |
10 +: | $ 0.28130 |
100 +: | $ 0.27550 |
1000 +: | $ 0.26970 |
10000 +: | $ 0.26100 |
Vgs(th) (Max) @ Id: | 4V @ 26µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3-313 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 58W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2550pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5.9 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD75N04S406ATMA1 is a Logic Level N-Channel Power MOSFET, a type of field-effect transistor (FET), used for any type of switching or amplifier application. In general, an IPD75N04S406ATMA1 is a four-terminal device, with the source connected to the drain, the gate connected to its own bias network, and two excellent open connections between the two. Each device also contains a resistor and a series of large diodes, providing protection against overvoltage, under-voltage, and thermal runaway conditions. Due to its small size and cost-effectiveness, the IPD75N04S406ATMA1 is widely used in the automotive, industrial, home appliance, and communication industries.The IPD75N04S406ATMA1 is a single gate Field-effect transistor that uses a gate voltage to control the current flow between the source and the drain. This type of FET is also known as an enhancement mode N-channel MOSFET (e-MOSFET). The advantages of this type of device are that it requires very low input voltage, it has very low “ON” resistance, and it has very low power consumption.The working principle of the IPD75N04S406ATMA1 is fairly simple. When a voltage is applied to the gate terminal, the current between the source and the drain is increased. The voltage applied to the gate overcomes the built-in depletion resistance, allowing electrons to flow from source to drain. This is known as “intrinsic enhancement”.The resistance between the source and the drain (the RDS) depends on the voltage being applied to the gate. The higher the gate voltage, the lower the RDS, meaning that the current will be maximized when the highest gate voltage is applied. In other words, the resistance between the source and the drain is inversely proportional to the gate voltage.The maximum current of the IPD75N04S406ATMA1 is limited by the maximum drain current (IDmax) rating. As the current increases, the safety margin of the device decreases, and thus the device should not be operated beyond its rated maximum.The gate voltage of the IPD75N04S406ATMA1 should be kept below its threshold voltage VTH. This is to avoid the possibility of encountering a leakage current, which could potentially damage the device.To summarize, the IPD75N04S406ATMA1 is a single gate N-channel MOSFET which has low input voltages, low “ON” resistance, and low power consumption. Its working principle is that a gate voltage is applied to the device, which overcomes the built-in depletion resistance and allows current to flow between the source and the drain. The maximum current of the device is limited by its IDmax rating, and the gate voltage should not be over the threshold voltage VTH. Due to its cost-effectiveness and small size, the IPD75N04S406ATMA1 is widely used in a variety of industries.
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