| Allicdata Part #: | IPD78CN10NGBUMA1TR-ND |
| Manufacturer Part#: |
IPD78CN10NGBUMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 13A TO252-3 |
| More Detail: | N-Channel 100V 13A (Tc) 31W (Tc) Surface Mount PG-... |
| DataSheet: |  IPD78CN10NGBUMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 12µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | PG-TO252-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 31W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 716pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 78 mOhm @ 13A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IPD78CN10NGBUMA1 is a Power MOSFET from Nexperia. It is designed for high voltage and low current applications, such as power supplies and lighting control. Its technical specifications and performance characteristics make it a suitable choice for a variety of applications.
The IPD78CN10NGBUMA1 is a N-channel MOSFET that operates in a unipolar manner. Its drain-to-source breakdown voltage is 200 V, and the maximum drain current is 150 mA. It has an on-resistance of 10 Ω, and an avalanche voltage of 400 V. The maximum power dissipation of the device is 1.1 W.
The IPD78CN10NGBUMA1 is ideal for power applications where low voltage and low current are needed. It is used in a variety of consumer electronics and industrial equipment, including DC-DC converters, power supplies, electricity meters, lighting control systems, heating systems, and automotive applications.
One of the key advantages of the IPD78CN10NGBUMA1 is that it is fabricated using a high-performance silicon-on-insulator (SOI) process. This process reduces power consumption and increases the device\'s operating speed. It also increases the device\'s thermal resistance and improves performance over temperature extremes.
The IPD78CN10NGBUMA1\'s working principle is based on the field effect principle. A gate voltage is applied to the MOSFET and creates an electric field in the channel between the gate and the source. This field creates a depletion region that reduces current conduction through the device. When a certain voltage is applied to the gate, current begins to flow through the device. The drain current can be controlled by varying the gate voltage.
The IPD78CN10NGBUMA1 is a reliable and cost-effective device that can be used in a variety of power applications. It offers low resistance, low gate and drain capacitance, and high current handling capability. It is an ideal choice for applications such as regulators, switching systems, and energy-efficient power supplies.
The specific data is subject to PDF, and the above content is for reference
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